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Cctv Camera

We are a leading Manufacturer of for visible to near ir, precision photometry, triple cavity 9 mils smd pld, c30902bh - si apd, 0.5mm, to-18 ball lens, large area, high-speed si pin photodiode, 46-element si photodiode array for uv to nir and 46 element si photodiode array for uv to nir from Gurgaon, India.

For visible to near IR, precision photometry

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For visible to near IR, precision photometry
  • For visible to near IR, precision photometry
  • For visible to near IR, precision photometry
  • For visible to near IR, precision photometry
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Product Details:
Photosensitive area2.4 x 2.8 mm
Number of elements1
PackageMetal
Package categoryTO-5
CoolingNon-cooled
Reverse voltage (max.)30 V
Spectral response range320 to 1100 nm
Peak sensitivity wavelength (typ.)960 nm
Photosensitivity (typ.)0.52 A per W
Dark current (max.)10000 pA
Cutoff frequency (typ.)30 MHz
Terminal capacitance (typ.)10 pF
Noise equivalent power (typ.)9.4x10-15 W/Hz1/2

Features
- High sensitivity in visible to near infrared range
- High reliability
- High-speed response: fc=30 MHz
- Low capacitance
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Triple Cavity 9 mils SMD PLD

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Triple Cavity 9 mils SMD PLD
  • Triple Cavity 9 mils SMD PLD
  • Triple Cavity 9 mils SMD PLD
  • Triple Cavity 9 mils SMD PLD
  • Triple Cavity 9 mils SMD PLD
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Pulsed laser905 nm
Stripe width75 micro m and 225 micro m
Peak Optical Power18 W (min)
Wavelength895 nm (min), 925 nm(max)
Operating Temperature-40 degree celsius (min), 85 degree celsius (max)

The TPGAD1S09H is an SMD packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 225 µm stripe width. It provides 70 W @ 30 A tested with a 50 ns wide pulse, and is offered in various other packages.
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C30902BH - Si APD, 0.5mm, TO-18 Ball Lens

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C30902BH - Si APD, 0.5mm, TO-18 Ball Lens
  • C30902BH - Si APD, 0.5mm, TO-18 Ball Lens
  • C30902BH - Si APD, 0.5mm, TO-18 Ball Lens
  • C30902BH - Si APD, 0.5mm, TO-18 Ball Lens
  • +1 C30902BH - Si APD, 0.5mm, TO-18 Ball Lens
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Product Details:
Active Area0.2 mm2
Active Diameter0.5 mm
Breakdown VoltageTyp. 225 V
Capacitance1.5 pF
Temperature CoefficientTyp. 0.7 V per degree celsius
Dark Current7 nA
Typical Responsivity80 A per W at 800 nm
Recommended Gain150
PackageTO-18, ball lens

Excelitas’ C30902EH Avalanche Photodiodes are high speed, large area silicon reach-through APDs that provide high responsivity at low noise. They are especially designed for low light applications that require typical gains larger than 100 and are offered within several TO-18 package configurations as flat glass, ball lens, light pipe and 905 nm filter.  
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Large area, high-speed Si PIN photodiode

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Large area, high-speed Si PIN photodiode
  • Large area, high-speed Si PIN photodiode
  • Large area, high-speed Si PIN photodiode
  • Large area, high-speed Si PIN photodiode
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Product Details:
Number of elements1
PackageMetal
Package categoryTO-8
CoolingNon-cooled
Reverse voltage (max.)50 V
Spectral response range320 to 1060 nm
Peak sensitivity wavelength (typ.)920 nm
Photosensitivity (typ.)0.54 A per W
Dark current (max.)10000 pA
Cutoff frequency (typ.)40 MHz
Terminal capacitance (typ.)18 pF
Noise equivalent power (typ.)2.1x10-14 W/Hz1/2

The S3071 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 40 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light detection.
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46-element Si photodiode array for UV to NIR

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46-element Si photodiode array for UV to NIR
  • 46-element Si photodiode array for UV to NIR
  • 46-element Si photodiode array for UV to NIR
  • 46-element Si photodiode array for UV to NIR
  • +1 46-element Si photodiode array for UV to NIR
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Product Details:
Element size (per 1 element)0.9 x 4.4 mm
Reverse voltage (max.)15 V
Spectral response range190 to 1000 nm
Peak sensitivity wavelength (typ.)800 nm
Photosensitivity (typ.)0.5 A per W
Dark current (max.)60 pA
Rise time (typ.)0.1 micro sec
Terminal capacitance (typ.)35 pF

The S4114-46Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. 
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46 element Si photodiode array for UV to NIR

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46 element Si photodiode array for UV to NIR
  • 46 element Si photodiode array for UV to NIR
  • 46 element Si photodiode array for UV to NIR
  • 46 element Si photodiode array for UV to NIR
  • +1 46 element Si photodiode array for UV to NIR
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Product Details:
Element size (per 1 element)0.9 x 4.4 mm
Package category48pin-DIP
Reverse voltage (max.)15 V
Spectral response range190 to 1100 nm
Peak sensitivity wavelength (typ.)960 nm
Photosensitivity (typ.)0.58 A/W
Dark current (max.)10 pA
Rise time (typ.)1.2 micro sec
Terminal capacitance (typ.)550 pF

The S4111-46Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light.
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46 element InGaAs array

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46 element InGaAs array
  • 46 element InGaAs array
  • 46 element InGaAs array
  • 46 element InGaAs array
  • +1 46 element InGaAs array
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Product Details:
Spectral response range0.9 to 1.7 micro m
Peak sensitivity wavelength (typ.)1.55 micro m
Photosensitivity (typ.)0.95 A per W
Dark current (max.)1.25 nA
Cutoff frequency (typ.)60 MHz
Terminal capacitance (typ.)35 pF
Measurement condition Typ.Ta is equal to 25 degree celsius, unless otherwise noted

Features
-46-element array
-Designed for simple measurement
-Large photosensitive area size
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UV to near IR for precision photometry

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UV to near IR for precision photometry
  • UV to near IR for precision photometry
  • UV to near IR for precision photometry
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Product Details:
Model NumberS1336-8BQ
Photosensitive area5.8 x 5.8 mm
Reverse voltage (max.)5 V
Spectral response range190 to 1100 nm
Peak sensitivity wavelength (typ.)960 nm
Dark current (max.)100 pA
Terminal capacitance (typ.)380 pF
Photosensitivity (typ.)0.5 A/W

High sensitivity in UV range, Low capacitance, High reliability
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16 element array

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16 element array
  • 16 element array
  • 16 element array
  • 16 element array
  • +1 16 element array
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Product Details:
Spectral response range0.9 to 1.7 micro m
Peak sensitivity wavelength (typ.)1.55 micro m
Photosensitivity (typ.)0.95 A per W
Dark current (max.)1 nA
Cutoff frequency (typ.)300 MHz
Terminal capacitance (typ.)10 pF
Measurement conditionTyp. Ta is equal to 25 degree celsius, unless otherwise noted

Features
-16-element array
-For simple measurement
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Quad Pyrodetector ,

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Quad Pyrodetector ,
  • Quad Pyrodetector ,
  • Quad Pyrodetector ,
  • Quad Pyrodetector ,
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Product Details:
Responsivity6.5 (10.2) kV/W (typical)
Operation requirements2.0 to 10 V
Housing with optical windowTO 5
Field of view103 degree or 100 degree

This "Quad" Pyrodetector Series provides all four elements connected to one common output. All elements are electrically connected to one FET in source follower connection forming one analog output signal.
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Small package and high resolution encoder module

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Small package and high resolution encoder module
  • Small package and high resolution encoder module
  • Small package and high resolution encoder module
  • Small package and high resolution encoder module
  • +2 Small package and high resolution encoder module
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Product Details:
PackagePlastic
Operating temperature-40 to +85 deg.C
Storage temperature-40 to +90 deg.C
Measurement conditionTa is equal to 25 degree celsius
TypeSmall package, high resolution: 0.05 mm (2-phase output)

The P11159-201AS is an optical encoder module that consists of a photo IC and red LED. The photo IC incorporates a 4-element photodiode and a 2-phase digital signal output circuit. When using 0.2 mm pitch slits, the P11159-201AS produces a 2-phase digital signal output matching the slit movement.
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