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Dectectors
We offer and deal in wide range of Dectectors.C30724EH - Si APD, 500um, TO
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Product BrochureProduct Details:| Active Area | 0.2mm2 |
| Active Diameter | 0.5 mm |
| Breakdown Voltage | 350 V |
| Capacitance | 1 pF |
| Dark Current | 20 nA |
| Package | TO-18 |
| Peak Sensitivity Wavelength | 920 nm |
| Photo Sensitive Diameter | 0.5 mm |
| Responsivity | 8.5 A per W at 920 nm |
| Rise/Fall Time | 5 ns |
| Total Dark Current (Bulk + Surface) | 20 nA |
| Vop Range | 150-200 V |
| Wavelength | 400-1100 nm |
The C30724EH Silicon Avalanche Photodiode (Si APD) offers 920 nm peak sensitivity and low-temperature coefficient in a metal TO-housing.
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C30645ECERH - InGaAS APD, 80um, Ceramic
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Product BrochureProduct Details:| Active Diameter | 80 micro m |
| Breakdown Voltage | 40-70 V |
| Temperature Coefficient | 0.14 V per degree celsius |
| Dark Current | 3 nA |
| Capacitance | 1.25 pF |
| Bandwidth | 1000 MHz |
| Gain | 20 |
| Package | 2x4mm ceramic submount carrier |
The C30645ECERH Large-Area InGaAs Avalanche Photodiode (APD) provides an 80 µm active diameter in ceramic submount carrier.
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Si photodiode molded into clear plastic package
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Product BrochureProduct Details:| Photosensitive area | 2.4 x 2.8 mm |
| Number of elements | 1 |
| Package | Plastic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 10 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.58 A per W |
| Dark current (max.) | 10 pA |
| Rise time (typ.) | 0.5 micro sec |
| Terminal capacitance (typ.) | 200 pF |
These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two photosensitive areas of 1.3 x 1.3 mm and 2.4 x 2.8 mm are also available.
Features
-Visible to near IR range
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35-element Si photodiode array for UV to NIR
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Product BrochureProduct Details:| Element size (per 1 element) | 0.9 x 4.4 mm |
| Number of elements | 35 |
| Package | Ceramic |
| Reverse voltage (max.) | 15 V |
| Spectral response range | 190 to 1000 nm |
| Peak sensitivity wavelength (typ.) | 800 nm |
| Photosensitivity (typ.) | 0.5 A per W |
| Dark current (max.) | 60 pA |
| Terminal capacitance (typ.) | 35 pF |
The S4114-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light.
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16 element Si photodiode array for UV to NIR
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Product BrochureProduct Details:| Element size (per 1 element) | 0.9 x 1.45 mm |
| Package category | 18pin-DIP |
| Reverse voltage (max.) | 15 V |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.58 A/W |
| Dark current (max.) | 5 pA |
| Rise time (typ.) | 0.5 micro sec |
| Terminal capacitance (typ.) | 200 pF |
The S4111-16Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light.
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16 element InGaAs array
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Product BrochureProduct Details:| Spectral response range | 0.9 to 1.7 micro m |
| Peak sensitivity wavelength (typ.) | 1.55 micro m |
| Photosensitivity (typ.) | 0.95 A per W |
| Dark current (max.) | 2.5 nA |
| Cutoff frequency (typ.) | 30 MHz |
| Terminal capacitance (typ.) | 60 pF |
Features
-16-element array
-Designed for simple measurement
-Large photosensitive area size
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Quadrant type G6849
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Product BrochureProduct Details:| Spectral response range | 0.9 to 1.7 micro m |
| Peak sensitivity wavelength (typ.) | 1.55 micro m |
| Photosensitivity (typ.) | 0.95 A per W |
| Dark current (max.) | 5 nA |
| Cutoff frequency (typ.) | 30 MHz |
| Terminal capacitance (typ.) | 100 pF |
| Measurement condition Typ. | Ta is equal to 25 degree celsius, unless otherwise noted |
Features
- Active area G6849 : φ2 mm quadrant element
- Low noise
- High reliability
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Photomultiplier Tubes ,
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Approx. Rs 9,000 / PieceGet Latest Price
Product Details:| Dimensions | 28 mm (1-1/8 inch) |
| Wavelength Range | 185-900 nm |
| Peak Wavelength | 400 nm |
| Active Area | 8 x 24 mm |
| Peak Responsivity 1 | 74 mA/W |
| Applications | Flow cytometer |
The Photomultiplier Tubes offered by us provide extremely high sensitivity & ultra-fast response. These have high bandwidth & noise-free gain on the order of a million, which makes them ideal for detection of extremely low light/ short pulses of light. Apart from its basic use, these can also be used for detecting photons from 115nm.
Specifications:
| Range | 115 nm to 1700nm |
| Types | Head on, Side on, Square |
| Size | 13 mm to 508 mm |
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Hamamatsu Si APD
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Approx. Rs 16,825 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | S3884 |
| Brand | HAMAMATSU |
| Type | Near infrared type (Low bias operation) |
| Package | Metal |
| Package Category | TO-5 |
| Peak sensitivity wavelength (typ.) | 800 nm |
| Spectral response range | 400 to 1000 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 5 nA |
| Cutoff frequency (typ.) | 400 MHz |
| Terminal capacitance (typ.) | 10 pF |
| Breakdown voltage (typ.) | 150 V |
| Type | Near infrared type (Low bias operation) |
|---|---|
| Photosensitive area | φ1.5 mm |
| Package | Metal |
| Package Category | TO-5 |
| Peak sensitivity wavelength (typ.) | 800 nm |
| Spectral response range | 400 to 1000 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 5 nA |
| Cutoff frequency (typ.) | 400 MHz |
| Terminal capacitance (typ.) | 10 pF |
| Breakdown voltage (typ.) | 150 V |
| Temperature coefficient of breakdown voltage (typ.) | 0.65 V/??? |
| Gain (typ.) | 100 |
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Si APD, Model Name/Number: S12053-02
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Approx. Rs 6,380 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Model Name/Number | S12053-02 |
| Type | Short wavelength type (Low bias operation) |
| Package | Metal |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 620 nm |
| Spectral response range | 200 to 1000 nm |
| Photosensitivity (typ.) | 0.42 A/W |
| Dark current (max.) | 5 nA |
| Cutoff frequency (typ.) | 900 MHz |
| Terminal capacitance (typ.) | 2 pF |
| Breakdown voltage (typ.) | 150 V |
| Gain (typ.) | 50 |
| Type | Short wavelength type (Low bias operation) |
|---|---|
| Photosensitive area | φ0.2 mm |
| Package | Metal |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 620 nm |
| Spectral response range | 200 to 1000 nm |
| Photosensitivity (typ.) | 0.42 A/W |
| Dark current (max.) | 5 nA |
| Cutoff frequency (typ.) | 900 MHz |
| Terminal capacitance (typ.) | 2 pF |
| Breakdown voltage (typ.) | 150 V |
| Temperature coefficient of breakdown voltage (typ.) | 0.14 V |
| Gain (typ.) | 50 |
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MPPC detector Module
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Approx. Rs 49,600 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Model Name/Number | C13365-1350SA |
| Brand | HAMAMATSU |
| Built-in sensor | S13360-1350CS |
| Cooling | Non-cooled |
| Effective photosensitive area/ch | 1.3 x 1.3 mm |
| Number of pixels/ch | 667 |
| Number of channels | 1 ch |
| Note | Analog output |
The C13365 series are optical measurement modules capable of detecting low level light. These modules consist of an MPPC, a signal ampliier circuit, a high-voltage power supply circuit, and a temperature compensation circuit. The photosensitive area is 1.3 × 1.3 mm, and the signal output is analog. Modules operate just by connecting them to an external power supply (±5 V).
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C30927EH-03 - Si APD Quadrant - 1.5mm - 800 nm
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Product BrochureProduct Details:| Breakdown voltage range (V) | 350 to 485 |
| Typical breakdown voltage (V) | 425 |
| Typical gain (M) | 100 |
| Typical Temperature Coefficient for constant gain (V per degree celsius) | 2.4 |
| Minimal Responsivity at 800 nm (A per W) | 45 |
| Typical Responsivity at 800 nm (A per W) | 55 |
| Typical total dark current (nA) | 100 |
| Maximal total dark current (nA) | 200 |
| Typical capacitance total of all quadrants (pF) | 3 |
| Maximal capacitance total of all quadrants (pF) | 5 |
| Maximal series resistance (ohm) | 15 |
| Typical rise and fall time (ns) | 3 |
| Storage temperature (degree celcius) | -60 to 120 |
| Operating temperature (degree celsius) | -40 to 60 |
The C30927EH-03 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused "reach-through" structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction.
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Specifically designed for photodiode modules (C10439 series)
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Product BrochureProduct Details:| Supply Voltage | +13 V |
| Supply Current | 2 A |
| Model Number | C10475-01 |
C10475-01 is a signal processing unit specifically designed to convert the output of a photodiode module (C10439 series) into digital signals. Highresolution digital output (16 bits) can be obtained through serial connection (RS-232C) to a PC. The sample software that comes with C10475-01 allows easily obtaining measurement data using the PC. The measurement data can also be recorded in the internal memory (data logger function). C10475-01 can also operate on batteries for portability.
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Position Sensitive Detectors
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Approx. Rs 25,000 / PieceGet Latest Price
Product Details:| Sensor Type | Resistive |
| stroke length | 7 |
| Light Source | Electric |
| Cable Length | 7m |
| Country of Origin | Made in India |
The superior functionality based Position Sensitive Detectors (PSD) offered by us consist of monolithic PIN photodiode with uniform resistance in one/ two dimensions. Compared to discrete element detectors, our PSDs have many advantages including fast response speed, high position resolution & simple operating circuits.
Features:
- Position data is independent of size of light spot on the detector
- These can be used for non-contact distance measurement
- Offer laser beam alignment & optical tracking of an object
- We can also offer PSDs for tracking electrons/ high energy particles.
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Hamamatsu Color Sensor
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Approx. Rs 1,500 / PieceGet Latest Price
Product BrochureProduct Details:| Part Number | S11012-01CR |
| Product type | RGB digital color sensor |
| Package material | Plastic |
| Package type | COB type |
| Package size | 3.43 x 3.8 x 1.6 mm |
| Photosensitive area | 1.2 x 1.2 mm |
| Spectral response range (Blue) | 400 to 540, 800 to 1000 nm |
| Spectral response range (Green) | 480 to 600, 760 to 1000 nm |
| Spectral response range (Red) | 590 to 1000 nm |
| Photosensitivity Low range (Blue) | 0.3 LSB/lx |
| Photosensitivity Low range (Green) | 0.6 LSB/lx |
| Photosensitivity Low range (Red) | 1.4 LSB/lx |
| Photosensitivity High range (Blue) | 2.6 LSB/lx |
| Photosensitivity High range (Green) | 5.3 LSB/lx |
| Photosensitivity High range (Red) | 12.9 LSB/lx |
| Operating temperature | -20 to 80 deg.C |
| Storage temperature | -20 to 85 deg.C |
| Product type | RGB digital color sensor |
|---|---|
| Package material | Plastic |
| Package type | COB type |
| Package size | 3.43 x 3.8 x 1.6 mm |
| Photosensitive area | 1.2 x 1.2 mm |
| Spectral response range (Blue) | 400 to 540, 800 to 1000 nm |
| Spectral response range (Green) | 480 to 600, 760 to 1000 nm |
| Spectral response range (Red) | 590 to 1000 nm |
| Photosensitivity Low range (Blue) | 0.3 LSB/lx |
| Photosensitivity Low range (Green) | 0.6 LSB/lx |
| Photosensitivity Low range (Red) | 1.4 LSB/lx |
| Photosensitivity High range (Blue) | 2.6 LSB/lx |
| Photosensitivity High range (Green) | 5.3 LSB/lx |
| Photosensitivity High range (Red) | 12.9 LSB/lx |
| Operating temperature | -20 to 80 deg.C |
| Storage temperature | -20 to 85 deg.C |
| Note | This sensor also has sensitivity in the infraredregion, so cut off infrared light as needed. |
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NORTHROP GRUMMAN Diode module
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Product Details:| Usage/Application | laser Diamond cutting |
| Brand | NORTHROP GRUMMAN |
| Part Number | RBAT24-1C2-CA1-0110, RBAT24-1C2-FA1-0130, RBAT34-1C2-FA1-0121 |
| Laser Type | CW |
| Optical Output Power | 75W, 50W |
| Type Of Instruments | Laser diode module |
Diode modules decouple parallel-switched power supplies. This means that a short circuit no longer
affects the load. Whether at the output of one of the power supply units or in the supply line from the power supply unit to the diode -
diode modules ensure absolute supply reliability from the power supply.
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Adjustable IR Sensor
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Approx. Rs 10,000 / PieceGet Latest Price
Product BrochureProduct Details:| Switching Mode | NO/NC |
| Sensing Distance | 5 mm |
| Output Type | PNP |
| Supply Voltage | 5-30 V |
| Number of Wires | 2 Wire |
| Body Material | Plastic |
| Body Style | Cylindrical |
| Operating Temperature | -40 Degree C to 85 Degree C |
An infrared sensor is an electronic device, that emits in order to sense some aspects of the surroundings. An IR sensor can measure the heat of an object as well as detects the motion. These types of sensors measure only infrared radiation, rather than emitting it that is called a passive IR sensor. Usually, in the infrared spectrum, all the objects radiate some form of thermal radiation.
These types of radiations are invisible to our eyes, which can be detected by an infrared sensor. The emitter is simply an IR LED (Light Emitting Diode) and the detector is simply an IR photodiode that is sensitive to IR light of the same wavelength as that emitted by the IR LED. When IR light falls on the photodiode, the resistances and the output voltages will change in proportion to the magnitude of the IR light received.
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S12237-03P Mems Mirror
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Approx. Rs 44,100 / NosGet Latest Price
Product BrochureProduct Details:| Spare Part Name | S12237-03P |
| Brand | HAMAMATSU |
| Type | 1-axis linear scan |
| Operation mode | Linear mode |
| Mirror material | Aluminium |
| Drive frequency (max.) | 100 Hz |
| Optical deflection angle | +-15 |
| Mirror size | 2.6 mm |
| Type | 1-axis linear scan |
|---|---|
| Operation mode | Linear mode |
| Mirror size | φ2.6 mm |
| Mirror material | Aluminium |
| Optical deflection angle | ±15 ° |
| Drive frequency (max.) | 100 Hz |
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Ghz Photo Receiver Series
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Approx. Rs 1,00,000 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Material | AlMg4.5Mn, nickel-plated |
| Weight | 100 g (0.23 lbs) |
| Output return loss | 7.3 dB |
| Output VSWR | 2.5 : 1 |
| Power supply voltage | +-20 V |
| Output | SMA jack (female) |
| Spectral range | 320 ... 1000 nm |
| Detector material | Si-PIN photodiode |
| Lower cut-off frequency (-3 dB) | 10 kHz |
- Si-PIN and InGaAs-PIN photodiodes
- Spectral range from 320 to 1700 nm
- Ultra broadband, frequency range from 10 kHz to 2 GHz
- Max. Conversion gain 4.75 x 10 3 V / W
- Min. NEP 11 pW / √Hz
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C30956EH - Si APD, 3mm, TO-8 Package
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Product BrochureProduct Details:| Active Area | 7 mm2 |
| Active Diameter | 3 mm |
| Capacitance | 2.4 pF |
| Dark Current | 100 nA |
| Gain | 75 |
| Package | TO-8 |
| Peak Sensitivity Wavelength | 900 nm |
| Rise/Fall Time | 2 ns |
| Temperature Coefficient | 2.4 V per degree celsius |
| Vop Range | 275-450 V |
| Wavelength | 400-1100 nm |
The C30956EH Large-area, Long Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 3 mm active area diameter with high quantum efficiency at 1060 nm. Designed in a TO-8 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
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Laser Beam Shutter
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Approx. Rs 10,00,000 / PieceGet Latest Price
Product Details:| Minimum Order Quantity | 1 Piece |
| UV Tube | 1/2 Aperture |
| Close Activation Time | 4.08 ms |
| Default Position | Closed |
| Compatible with the SC10 and KSC101 Controllers | Sold Separately Below |
| SM05-Threaded | (0.535"-40) Aperture for SM05 Lens Tube Compatibility |
| Key Switch Provides | Additional Safety |
Our reputed entity is engaged in supplying Beam Shutters.
Our reputed entity is engaged in supplying Beam Shutters.
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Scientific CCD Cameras
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Approx. Rs 15,00,000 / PieceGet Latest Price
Product Details:| Camera Resolution | 1 MP, 1.3 MP |
| Camera Technology | Analog Camera |
| IR Range | 10 to 15 m |
| Camera Type | Wired Camera |
| Camera Style | Dome Camera, Bullet Camera |
| Country of Origin | Made in India |
For meeting the demands of scientific, biological, medical and industrial applications, we offer clients a wide range of Scientific Cameras. These are developed for low-contrast specimens that could not be observed formerly without staining. Our cameras help in providing clear displays along with fluorescence & emissions too faint to be seen by the human eye.
Usage:
- Meeting the high demands of diagnostic imaging systems
- Meeting varied industrial process demands
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Photomultiplier , Tube
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Approx. Rs 36,800 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Type | Head-on type |
| Tube Size | Dia.25 mm |
| Photocathode Area Shape | Round |
| Photocathode Area Size | Dia.22 mm |
| Wavelength (Short) | 300 nm |
| Wavelength (Long) | 650 nm |
| Wavelength (Peak) | 420 nm |
| Model no. | R1924A |
| Dynode Stages | 10 |
| [Max. Rating] Anode to Cathode Voltage | 1250 V |
| Type | Head-on type |
|---|---|
| Tube Size | Dia.25 mm |
| Photocathode Area Shape | Round |
| Photocathode Area Size | Dia.22 mm |
| Wavelength (Short) | 300 nm |
| Wavelength (Long) | 650 nm |
| Wavelength (Peak) | 420 nm |
| Spectral Response Curve Code | 400K |
| Photocathode Material | Bialkali |
| Window Material | Borosilicate glass |
| Dynode Structure | Circular and linear-focused |
| Dynode Stages | 10 |
| [Max. Rating] Anode to Cathode Voltage | 1250 V |
| [Max. Rating] Average Anode Current | 0.1 mA |
| Anode to Cathode Supply Voltage | 1000 V |
| [Cathode] Luminous Sensitivity Min. | 60 μA/lm |
| [Cathode] Luminous Sensitivity Typ. | 90 μA/lm |
| [Cathode] Blue Sensitivity Index (CS 5-58) Typ. | 10.5 |
| [Cathode] Radiant Sensitivity Typ. | 85 mA/W |
| [Anode] Luminous Sensitivity Min. | 40 A/lm |
| [Anode] Luminous Sensitivity Typ. | 180 A/lm |
| [Anode] Radiant Sensitivity Typ. | 1.7 x 105 A/W |
| [Anode] Gain Typ. | 2.0 x 106 |
| [Anode] Dark Current (after 30min.) Typ. | 3 nA |
| [Anode] Dark Current (after 30min.) Max. | 20 nA |
| [Time Response] Rise Time Typ. | 1.5 ns |
| [Time Response] Transit Time Typ. | 17 ns |
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Silicon Photodiodes semiconductor light sensors
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Approx. Rs 1,000 / PieceGet Latest Price
Product BrochureProduct Details:| Voltage | 220 V |
| Country of Origin | Made in India |
| Power | electric |
| Frequency | 60 hz |
| Material | MS |
Silicon Photodiodes offered by us are semiconductor light sensors that generate current/ voltage when P-N junction in semiconductor is illuminated by light. Featuring excellent linearity with respect to incident light these also have low internal noise, are compact and lightweight, have wide spectral response and are mechanically rugged. These can also be combined either monolithically or as hybrid with signal processing for creating powerful Photo IC sensors/optical communication receivers & transmitters.
Photodiode Range:
- Silicon Photodiode: Featuring high sensitivity & low dark current, these photodiodes are specifically designed for precision photometry in a wide range of fields
- PIN Photodiodes: For delivering a wide bandwidth with a low bias, which makes them ideal for high-speed photometry & optical communications
- Silicon Photodiode with preamp/cooler: Comes incorporated with a photodiode & low noise preamplifier chip into the same package
- Silicon Photodiode array : Consists of multiple elements of photodiode, formed in a linear or matrix arrangement in one package
- APD (Avalanche photodiode): The silicon avalanche photodiode (Si APD) has internal gain mechanism, fast time response & high sensitivity in the UV to near infrared region
- X-ray Photodiodes: These are used for ionizing radiation & high energy particle detection
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GHZ-Fotoempfanger Serie HSPR-x Und HSA-x-s
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Approx. Rs 1,00,000 / PieceGet Latest Price
Product Details:| Minimum Order Quantity | 1 Piece |
| Power supply voltage | +-20 V |
| Optical input power | 12 mW (averaged) |
| Operating temperature | 0 ... +60 DegreeC |
| Storage temperature | -40 ... +100 DegreeC |
| Weight | 100 g (0.23 lbs) |
| Material | AlMg4.5Mn, nickel-plated |
- Si-PIN- und InGaAs-PIN-Fotodioden
- Spektralbereich von 320 bis 1700 nm
- Ultra-breitbandig, Frequenzbereich von 10 kHz bis zu 2 GHz
- Max. Konversionsverstärkung 4,75 x 103 V/W
- Min. NEP 11 pW/√Hz
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Hamamatsu Photomultiplier Tube
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Approx. Rs 47,000 / NumberGet Latest Price
Product BrochureProduct Details:| Type | Side-on type |
| Tube Size | Dia.28 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 8 x 24 mm |
| Wavelength (Short) | 160 nm |
| Wavelength (Long) | 900 nm |
| Wavelength (Peak) | 400 nm |
| Type | Side-on type |
|---|---|
| Tube Size | Dia.28 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 8 x 24 mm |
| Wavelength (Short) | 160 nm |
| Wavelength (Long) | 900 nm |
| Wavelength (Peak) | 400 nm |
| Spectral Response Curve Code | 562S |
| Photocathode Material | Multialkali |
| Window Material | Quartz |
| Dynode Structure | Circular-cage |
| Dynode Stages | 9 |
| [Max. Rating] Anode to Cathode Voltage | 1250 V |
| [Max. Rating] Average Anode Current | 0.1 mA |
| Anode to Cathode Supply Voltage | 1000 V |
| [Cathode] Luminous Sensitivity Min. | 140 μA/lm |
| [Cathode] Luminous Sensitivity Typ. | 250 μA/lm |
| [Cathode] Blue Sensitivity Index (CS 5-58) Typ. | 8.0 |
| [Cathode] Red/White Ratio (R-68) Typ. | 0.3 |
| [Cathode] Radiant Sensitivity Typ. | 74 mA/W |
| [Anode] Luminous Sensitivity Min. | 400 A/lm |
| [Anode] Luminous Sensitivity Typ. | 2500 A/lm |
| [Anode] Radiant Sensitivity Typ. | 7.4 x 105 A/W |
| [Anode] Gain Typ. | 1.0 x 107 |
| [Anode] Dark Current (after 30min.) Typ. | 3 nA |
| [Anode] Dark Current (after 30min.) Max. | 50 nA |
| [Time Response] Rise Time Typ. | 2.2 ns |
| [Time Response] Transit Time Typ. | 22 ns |
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Photomultiplier tube R759
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Product BrochureProduct Details:| Tube Size | Dia.13 mm |
| Photocathode Area Shape | Round |
| Photocathode Area Size | Dia.10 mm |
| Wavelength (Short) | 160 nm |
| Wavelength (Long) | 320 nm |
| Wavelength (Peak) | 240 nm |
| Spectral Response Curve Code | 200S |
| Photocathode Material | Cs-Te |
| Window Material | Quartz |
13mm dia., Head-on type, Cs-Te photocathode (Effective area : 10 mm dia. /Spectral response : 160 nm to 320 nm)
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Photomultiplier tube R3550P-600
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Product BrochureProduct Details:| Tube Size | Dia.25 mm |
| Photocathode Area Shape | Round |
| Photocathode Area Size | Dia.22 mm |
| Wavelength (Short) | 300 nm |
| Wavelength (Long) | 650 nm |
| Wavelength (Peak) | 375 nm |
| Photocathode Material | Low noise super bialkali |
| Window Material | Borosilicate glass |
| Dynode Stages | 10 |
25mm dia., Head-on type, Low noise super bialkali photocathode (Effective area : 22 mm dia./Spectral response : 300 nm to 650 nm), Photon counting type of R3550A-600
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Photomultiplier tube R464
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Product BrochureProduct Details:| Tube Size | Dia.51 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 5 mm x 8 mm |
| Wavelength (Short) | 300 nm |
| Wavelength (Long) | 650 nm |
| Wavelength (Peak) | 420 nm |
| Spectral Response Curve Code | 400K |
| Photocathode Material | Bialkali |
51mm dia., Head-on type, Bialkali photocathode (Effective area : 5 mm x 8 mm /Spectral response : 300 nm to 650 nm)
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Photomultiplier tube R4220
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Product BrochureProduct Details:| Tube Size | Dia.28 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 8 mm x 24 mm |
| Wavelength (Short) | 185 nm |
| Wavelength (Long) | 710 nm |
| Wavelength (Peak) | 410 nm |
| Spectral Response Curve Code | 456U |
28mm dia., Side-on type, Low noise bialkali photocathode (Effective area : 8 mm x 24 mm /Spectral response : 185 nm to 710 nm)
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Photomultiplier tube R14657
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Product BrochureProduct Details:| Type | Side-on type |
| Features | High quantum efficiency |
| Tube Size | Dia.13 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 4 mm x 13 mm |
| Wavelength (Short) | 185 nm |
| Wavelength (Long) | 900 nm |
| Wavelength (Peak) | 480 nm |
13mm dia., Side-on type, High Q.E. Multialkali photocathode (Effective area : 4 mm x 13 mm /Spectral response : 185 nm to 900 nm)
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Photomultiplier tube R8520-406-001
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Product BrochureProduct Details:| Tube Size | 25.7 mm x 25.7 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 20.5 mm x 20.5 mm |
| Wavelength (Short) | 160 nm |
| Wavelength (Long) | 650 nm |
| Wavelength (Peak) | 420 nm |
R8520-406-001 is bialkali photocathode PMT with spectral response range from 160 nm to 650 nm.It is made of low-radioactive materials and is suitable for high-energy physics experiments.
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Photomultiplier tube R2658
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Product BrochureProduct Details:| Tube Size | Dia.28 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 3 mm x 12 mm |
| Wavelength (Short) | 185 nm |
| Wavelength (Long) | 1010 nm |
| Wavelength (Peak) | 400 nm |
| Spectral Response Curve Code | 850U |
28mm dia., Side-on type, InGaAs photocathode (Effective area : 3 mm x 12 mm /Spectral response : 185 nm to 1010 nm)
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Photomultiplier tube R5108
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Product BrochureProduct Details:| Tube Size | Dia.28 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 18 mm x 16 mm |
| Wavelength (Short) | 400 nm |
| Wavelength (Long) | 1200 nm |
| Wavelength (Peak) | 800 nm |
| Spectral Response Curve Code | 700K |
28mm dia., Side-on type, Ag-O-Cs photocathode (Effective area : 18 mm x 16 mm /Spectral response : 400 nm to 1200 nm)
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Photomultiplier tube R7600U-300
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Product BrochureProduct Details:| Tube Size | 30 mm x 30 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 18 mm x 18 mm |
| Wavelength (Short) | 300 nm |
| Wavelength (Long) | 700 nm |
| Wavelength (Peak) | 420 nm |
| Spectral Response Curve Code | 444 K |
30 mm x 30 mm metal package type, Extended green bialkali photocathode (Effective area : 18 mm x 18 mm / Spectral response : 300 nm to 650 nm)
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Photomultiplier tube R2248
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Product BrochureProduct Details:| Type | Special envelope type |
| Tube Size | 9.8 mm x 9.8 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 8 mm x 8 mm |
| Wavelength (Short) | 300 nm |
| Wavelength (Long) | 650 nm |
| Wavelength (Peak) | 420 nm |
10 mm x 10 mm Rectangular, Head-on type, Bialkali photocathode, Spectral response : 300 nm to 650 nm)
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New Age Instruments & Materials Private Limited
New Age Instruments & Materials Private Limited
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