New Age Instruments & Materials Private Limited
New Age Instruments & Materials Private Limited

Gurgaon, Gurugram, Haryana

GST No. 06AACCN0141N1ZM

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Prominent & Leading Manufacturer from Gurgaon, we offer canfocal raman system, built in 16 element gain stabilized apd array suitable for short pulse light detection, built in 16 element gain stabilized apd array, c30659-uv-1 - si apd receiver, 1x1mm, 50mhz, to-8, uv enhanced, llam-1550-r08bh - ingaas apd receiver, 80um, to-66, 200mhz, cooler and c30902eh-2 - si apd, 0.5mm, to-18, 905nm filter.

Canfocal Raman System

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Canfocal Raman System
  • Canfocal Raman System
  • Canfocal Raman System
  • Canfocal Raman System
  • +9 Canfocal Raman System
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Approx. Rs 1,25,00,000 / PieceGet Latest Price

Product Details:
Wavelength Range190-900 nm
BrandRaman
Optical SystemSingle Beam
Model Name/NumberSTR Series
Spectral Bandwidth1 nm
MobilityPortable

Confocal Raman microscopy can be used to determine layers in a multi-layer sample. Firstly, a cross-section of a sample can be made and the sample mapped across
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Built in 16 element gain stabilized APD array suitable for short pulse light detection

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Built in 16 element gain stabilized APD array suitable for short pulse light detection
  • Built in 16 element gain stabilized APD array suitable for short pulse light detection
  • Built in 16 element gain stabilized APD array suitable for short pulse light detection
  • Built in 16 element gain stabilized APD array suitable for short pulse light detection
  • Built in 16 element gain stabilized APD array suitable for short pulse light detection
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Product Details:
Number of channel16 ch
Photosensitive area/ch0.15 x 0.45 mm
Spectral response range400 to 1100 nm
Peak sensitivity wavelength840 nm
Photosensitivity0.5 A/W
High Band Cut-off Frequency300 MHz

This device is for direct TOF (time-of-flight) distance measurement, integrating a 16 ch Si APD array and a transimpedance amplifier. A gain-stabilized APD (GS APD) is used, and there is little gain fluctuation relative to temperature fluctuation, so there is no need for a temperature sensor or microcontroller.
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Built in 16 element gain stabilized APD array

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Built in 16 element gain stabilized APD array
  • Built in 16 element gain stabilized APD array
  • Built in 16 element gain stabilized APD array
  • Built in 16 element gain stabilized APD array
  • Built in 16 element gain stabilized APD array
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Product Details:
Number of channel16 ch
Photosensitive area/ch0.15 x 0.45 mm
Spectral response range400 to 1100 nm
Peak sensitivity wavelength840 nm
Photosensitivity0.5 A/W
High Band Cut-off Frequency300 MHz

This device is for direct TOF (time-of-flight) distance measurement, integrating a 16 ch Si APD array and a transimpedance amplifier. A gain-stabilized APD (GS APD) is used, and there is little gain fluctuation relative to temperature fluctuation, so there is no need for a temperature sensor or microcontroller.
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C30659-UV-1 - Si APD Receiver, 1x1mm, 50MHz, TO-8, UV Enhanced

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C30659-UV-1 - Si APD Receiver, 1x1mm, 50MHz, TO-8, UV Enhanced
  • C30659-UV-1 - Si APD Receiver, 1x1mm, 50MHz, TO-8, UV Enhanced
  • C30659-UV-1 - Si APD Receiver, 1x1mm, 50MHz, TO-8, UV Enhanced
  • C30659-UV-1 - Si APD Receiver, 1x1mm, 50MHz, TO-8, UV Enhanced
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Product Details:
System bandwidth50 MHz
Spectral response range400 to 950 nm
Typical power consumption150 mW
Amplifier operating voltages+- 5 V
AC load capability (AC-Coupled)50 ohm
Hermetically sealedTO-8 package

The C30659-UV-1 includes a UV-Enhanced Silicon Avalanche Photodiode (Si APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation.
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LLAM-1550-R08BH - InGaAs APD Receiver, 80um, TO-66, 200MHz, Cooler

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LLAM-1550-R08BH - InGaAs APD Receiver, 80um, TO-66, 200MHz, Cooler
  • LLAM-1550-R08BH - InGaAs APD Receiver, 80um, TO-66, 200MHz, Cooler
  • LLAM-1550-R08BH - InGaAs APD Receiver, 80um, TO-66, 200MHz, Cooler
  • LLAM-1550-R08BH - InGaAs APD Receiver, 80um, TO-66, 200MHz, Cooler
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Product Details:
Active Area0.005 mm2
Active Diameter0.08 mm
Bandwidth175 MHz
Peak Sensitivity Wavelength1550 nm
Responsivity80 kV per W at 1330 nm 90 kV per W at 1550 nm
Rise & Fall Time2 ns
Temperature Coefficient0.2 V per degree celsius

The LLAM-1550-R08BH is a high-speed, low-light analog avalanche photodiode (APD) receiver module with a 1550 nm InGaAs APD and features a thermoelectric cooler.
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C30902EH-2 - Si APD, 0.5mm, TO-18, 905nm filter

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C30902EH-2 - Si APD, 0.5mm, TO-18, 905nm filter
  • C30902EH-2 - Si APD, 0.5mm, TO-18, 905nm filter
  • C30902EH-2 - Si APD, 0.5mm, TO-18, 905nm filter
  • C30902EH-2 - Si APD, 0.5mm, TO-18, 905nm filter
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Product Details:
Active Area0.2 mm2
Active Diameter0.5 mm
Breakdown VoltageTyp. 225 V
Capacitance1.5 pF
Temperature CoefficientTyp. 0.7 V per degree celsius
Dark Current7 nA
Typical Responsivity66 A per W at 905 nm
Recommended Gain150
PackageTO-18, flat window, filter

Excelitas’ C30902EH Avalanche Photodiodes are high speed, large area silicon reach-through APDs that provide high responsivity at low noise. They are especially designed for low light applications that require typical gains larger than 100 and are offered within several TO-18 package configurations as flat glass, ball lens, light pipe and 905 nm filter.  
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High UV tolerance, photodiodes for UV monitor

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High UV tolerance, photodiodes for UV monitor
  • High UV tolerance, photodiodes for UV monitor
  • High UV tolerance, photodiodes for UV monitor
  • High UV tolerance, photodiodes for UV monitor
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Product Details:
Model NumberS12698
Type3-pin type
Spectral Range190-1000 nm
SensitivityHigh sensitivity in UV region

The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin.
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C30645L-080 - InGaAs APD, 80um, SMD Package

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C30645L-080 - InGaAs APD, 80um, SMD Package
  • C30645L-080 - InGaAs APD, 80um, SMD Package
  • C30645L-080 - InGaAs APD, 80um, SMD Package
  • C30645L-080 - InGaAs APD, 80um, SMD Package
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Product Details:
Active Diameter80 micro m
Breakdown Voltage45-70 V
Temperature Coefficient0.14 V per degree celsius
Dark Current5 nA
Capacitance1.45 pF
BandwidthGreater than 1000 MHz
Gain20
PackageSMD

Excelitas’ C30645L-080 Avalanche Photodiodes are high speed, large area InGaAs APDs that provide high quantum efficiency and high responsivity at low noise in the spectral range between 1000 nm and 1700 nm. These photodiodes provide an 80 µm active diameter in a compact SMD package.
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Photon Counting ,

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Photon Counting ,
  • Photon Counting ,
  • Photon Counting ,
  • Photon Counting ,
  • +1 Photon Counting ,
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Product Details:
Active Area0.2 mm2
Active Diameter0.5 mm
Breakdown Voltagetyp. 225 V
Capacitancetyp. 1.5 pF
Temperature Coefficienttyp. 0.7 V per degree celsius
Dark Current7 nA
Typically Responsivity135 A per W at 800 nm
Recommended Gain250
PackageTO-18, flat window

Excelitas’ C30902SH Avalanche Photodiodes are high speed, large area Silicon APDs that provide high responsivity at low noise. They are specially selected to be used either in Geiger Mode (VOP > VBD) for detection of single photons or Linear Mode (VOP < VBD) with gains up to 250.
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C30955EH - Si APD, 1.5mm, TO-5 Package

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C30955EH - Si APD, 1.5mm, TO-5 Package
  • C30955EH - Si APD, 1.5mm, TO-5 Package
  • C30955EH - Si APD, 1.5mm, TO-5 Package
  • C30955EH - Si APD, 1.5mm, TO-5 Package
  • C30955EH - Si APD, 1.5mm, TO-5 Package
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Product Details:
Active Area1.77 mm2
Active Diameter1.5 mm
Capacitance3pF
Dark Current100nA
Gain100
PackageTO-5
Peak Sensitivity Wavelength900 nm
Rise and Fall Time2ns
Temperature Coefficient2.4 V per degree celsius
Vop Range275-450 V
Wavelength400-1100 nm

The C30955EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (APD) provides a 1.5 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
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LLAM-1550E-R2AH - InGaAs APD Receiver, 200um, TO-66, 50MHz, Cooler, High-Damage Threshold

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LLAM-1550E-R2AH - InGaAs APD Receiver, 200um, TO-66, 50MHz, Cooler, High-Damage Threshold
  • LLAM-1550E-R2AH - InGaAs APD Receiver, 200um, TO-66, 50MHz, Cooler, High-Damage Threshold
  • LLAM-1550E-R2AH - InGaAs APD Receiver, 200um, TO-66, 50MHz, Cooler, High-Damage Threshold
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Product Details:
Active Area0.03 mm2
Active Diameter0.2 mm
Bandwidth50 MHz
Rise & Fall Time7 ns
Temperature Coefficient0.2 V per degree celsius
Peak Sensitivity Wavelength1550nm
Responsivity300 kV per W at 1330 nm 340 kV per W at 1550 nm

The LLAM-1550E-R2AH is high-speed, low-light analog avalanche photodiode (APD) receiver module with a 1550 nm InGaAs APD. Featuring a thermoelectric cooler, this APD Receiver Module offers a bandwidth of 50 MHz and high-damage threshold.
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C30950EH - Si APD Receiver, 0.8mm, 50MHz, TO-8

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C30950EH - Si APD Receiver, 0.8mm, 50MHz, TO-8
  • C30950EH - Si APD Receiver, 0.8mm, 50MHz, TO-8
  • C30950EH - Si APD Receiver, 0.8mm, 50MHz, TO-8
  • C30950EH - Si APD Receiver, 0.8mm, 50MHz, TO-8
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Product Details:
System bandwidth50 MHz
Spectral response rangePeak at 900 nm
Typical power consumption60 mW
Spectral response400 to 1100 nm
Light entry angle130 degree
Hermetally-sealedTO-8 package
Si APD receiver modulewith 50 MHz bandwidth

The C30950EH is a Silicon Avalanche Photodiode (Si APD) Amplifier Module with 50 MHz bandwidth and includes our C30817 silicon avalanche photodiode (APD). With a useful diameter of 0.8 mm, the C30950EH provides good response between 400 and 1100 nm and is supplied in a modified 12-lead TO-8 package.
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High reliability photo IC operable at 2.2 V

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High reliability photo IC operable at 2.2 V
  • High reliability photo IC operable at 2.2 V
  • High reliability photo IC operable at 2.2 V
  • High reliability photo IC operable at 2.2 V
  • +2 High reliability photo IC operable at 2.2 V
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Product Details:
Current comsumption1.3 mA
Storage temperature-30 to +85 deg.C
Operating temperature-25 to +80 deg.C
Package typeclear
PackagePlastic
TypeLow-voltage operation, open collector output, "L" level output at light input

The S12558-02DT is a photo ICs comprised of a photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated onto a single chip and molded with clear resin into a miniature package. An optical encoder resistant to tough environmental conditions can be configured by combining the S12558-02DT with infrared LED L6895-10 (made by Hamamatsu).
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High reliability photo IC operable at 2.2 V

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High reliability photo IC operable at 2.2 V
  • High reliability photo IC operable at 2.2 V
  • High reliability photo IC operable at 2.2 V
  • High reliability photo IC operable at 2.2 V
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Product Details:
TypeLow-voltage operation, open collector output, "L" level output at light input
Operating temperature-25 to +80 deg.C
Storage temperature-30 to +85 deg.C
Current comsumption1.3 mA
Package typeclear
PackagePlastic

The S12558-01DT is a photo IC comprised of a photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated onto a single chip and molded with clear resin into a miniature package. An optical encoder resistant to tough environmental conditions can be configured by combining S12558-01DT with infrared LED L6895-10 (made by HAMAMATSU).
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Converts light intensity to frequency of output pulse

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Converts light intensity to frequency of output pulse
  • Converts light intensity to frequency of output pulse
  • Converts light intensity to frequency of output pulse
  • Converts light intensity to frequency of output pulse
  • +2 Converts light intensity to frequency of output pulse
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Product Details:
OutputDigital
Supply voltage2.7 to 5.5 V
Spectral response range390 to 650 nm
Peak sensitivity wavelength550 nm
Output frequency50 kHz
Operating temperature-40 to +85 deg.C
Storage temperature-40 to +100 deg.C
FeatureCMOS level digital output

The S9705 is a photo IC that combines a photodiode and a current-to-frequency converter on a CMOS chip. Output is a square wave (50 % duty ratio) with frequency directly proportional to light intensity incident on the photodiode. The CMOS level digital output allows direct connection to a microcontroller or other logic circuitry. The S9705 has wide dynamic range and light intensity can be easily measured when used with a digital counter.
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I2C interface-compatible InGaAs photodiode (Built-in LED type)

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I2C interface-compatible InGaAs photodiode (Built-in LED type)
  • I2C interface-compatible InGaAs photodiode (Built-in LED type)
  • I2C interface-compatible InGaAs photodiode (Built-in LED type)
  • I2C interface-compatible InGaAs photodiode (Built-in LED type)
  • +2 I2C interface-compatible InGaAs photodiode (Built-in LED type)
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Product Details:
DetectorInGaAs PIN photodiode
Spectral response range0.9 to 1.7 micro m
Peak sensitivity wavelength (typ.)1.55 micro m
EmitterInfrared LED
Emitter area0.31 x 0.31 mm
Peak emission wavelength (typ.)1.45 micro m
Spectral half width (typ.)120 nm

This reflective sensor houses an InGaAs PIN photodiode and 1.45 µm band LED in a compact package. The LED irradiates infrared light on the target object, and the photodiode signal generated from the reflected light is output digitally through an I2C interface.
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Chip carrier package for surface mount

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Chip carrier package for surface mount
  • Chip carrier package for surface mount
  • Chip carrier package for surface mount
  • Chip carrier package for surface mount
  • Chip carrier package for surface mount
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Product Details:
Photosensitive area5 x 5 mm
Number of elements1
PackageCeramic
Package categorySurface mount type
CoolingNon-cooled
Reverse voltage (max.)30 V
Spectral response range320 to 1100 nm
Peak sensitivity wavelength (typ.)960 nm
Photosensitivity (typ.)0.72 A per W
Dark current (max.)5000 pA
Cutoff frequency (typ.)20 MHz
Terminal capacitance (typ.)40 pF
Noise equivalent power (typ.)1.6x10-14 W/Hz1/2

The S5106 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. This photodiode has a large photosensitive area, making it suitable for spatial light transmission where a wide field-of-view angle is required. Other applications include POS scanners, power meters and analytical instruments.
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C30645EH - InGaAs APD, 80um, TO-18 Low-Profile

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C30645EH - InGaAs APD, 80um, TO-18 Low-Profile
  • C30645EH - InGaAs APD, 80um, TO-18 Low-Profile
  • C30645EH - InGaAs APD, 80um, TO-18 Low-Profile
  • C30645EH - InGaAs APD, 80um, TO-18 Low-Profile
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Product Details:
Active Diameter80 micro m
Breakdown Voltage40-70 V
Temperature Coefficient0.14 V per degree celsius
Dark Current3 nA
Capacitance1.25 pF
Bandwidth1000 MHz
Gain20
PackageTO-18
Window apertureSmall 0.8 mm
Window TypeSilicon blocks visible light less than 1100 nm

The C30645EH Large-Area InGaAs Avalanche Photodiode provides an 80 µm active diameter in hermetic TO-18 package and small aperture silicon window.
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C30737PH-230-80N - Si APD, 230um, Plastic, 800nm enhanced

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C30737PH-230-80N - Si APD, 230um, Plastic, 800nm enhanced
  • C30737PH-230-80N - Si APD, 230um, Plastic, 800nm enhanced
  • C30737PH-230-80N - Si APD, 230um, Plastic, 800nm enhanced
  • C30737PH-230-80N - Si APD, 230um, Plastic, 800nm enhanced
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Product Details:
Active Diameter230 micro m
Peak Sensitivity Wavelength800 nm
Breakdown Voltage Vbd120-210 (binning available)
Temperature Coefficient of Vop for constant M0.5 V per degree celsius
Responsivity50 A per W at 800 nm
Capacitance1 pF
Rise/Fall Time0.2 ns R load = 50 ohm
Cut-off frequency1.5 GHz
Storage Temp-50 degree celsius to +100 degree celsius
Operating Temp-40 degree celsius to +85 degree celsius

The C30737PH-230-80N Silicon Avalanche Photodiode (Si APD) offers an active diameter of 230 µm and enhanced 800 nm response in a plastic T 1¾ through-hole package.
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C30737CH-300-70 - Si APD, 300um, LLC side-looking

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C30737CH-300-70 - Si APD, 300um, LLC side-looking
  • C30737CH-300-70 - Si APD, 300um, LLC side-looking
  • C30737CH-300-70 - Si APD, 300um, LLC side-looking
  • C30737CH-300-70 - Si APD, 300um, LLC side-looking
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Product Details:
Active Diameter300micro m
Peak Sensitivity Wavelength800 nm
Breakdown Voltage Vbd110-160
Responsivity35A per W at 635 nm
Dark Current1 nA
Capacitance0.7 pF
Cut-off frequency700 MHz
Storage Temp-20 degree celsius to +70 degree celsius
Operating Temp-10 degree celsius to +50 degree celsius
Package2x4mm FR4 Epoxy side looking Leadless Laminated Carrier

The C30737CH-300-70 Silicon Avalanche Photodiode (Si APD) provides a 300 µm active diameter with enhanced 800 nm response in a leadless laminated carrier (LCC).
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High UV tolerance, photodiodes for UV monitor

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High UV tolerance, photodiodes for UV monitor
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  • High UV tolerance, photodiodes for UV monitor
  • High UV tolerance, photodiodes for UV monitor
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Product Details:
Model NumberS12698-02
Photosensitive area5.8 x 5.8 mm
Reverse voltage (max.)5 V
Spectral response range190 to 1000 nm
Peak sensitivity wavelength (typ.)800 nm
Terminal capacitance (typ.)700 pF

The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin. They exhibit low sensitivity deterioration under UV light irradiation and are suitable for applications such as monitoring intense UV light sources.
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High UV tolerance, photodiodes for UV monitor

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High UV tolerance, photodiodes for UV monitor
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  • High UV tolerance, photodiodes for UV monitor
  • High UV tolerance, photodiodes for UV monitor
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Product Details:
Model NumberS12698-04
Photosensitive area3.6 x 3.6 mm
CoolingNon-cooled
Reverse voltage (max.)5 V
Spectral response range190 to 1000 nm
Peak sensitivity wavelength (typ.)800 nm
Dark current (max.)50 pA

The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin. They exhibit low sensitivity deterioration under UV light irradiation and are suitable for applications such as monitoring intense UV light sources.
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C30733EH-1 - InGaAs APD, 30um, TO-18 Low-Profile

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C30733EH-1 - InGaAs APD, 30um, TO-18 Low-Profile
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  • C30733EH-1 - InGaAs APD, 30um, TO-18 Low-Profile
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Product Details:
Active Diameter30 micro m
Breakdown Voltage45 V - 70 V
Temperature Coefficient0.14 V per degree celsius
Capacitance0.5 pF
Gain40
Quantum Efficiency75 percent (1300 nm - 1550 nm)
PackageTO-18

The Excelitas C30733EH-1 Small-Area InGaAs Avalanche Photodiode provides a 30 µm active diameter in hermetic TO-18. Optimized for the wavelength range of 1310 nm to 1650 nm, the C30733EH-1 is suitable for high-end test equipment where extremely fast response and recovery time is required such as OTDRs in telecom. 
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C30927EH-01 - Si APD Quadrant - 1.5 mm - 1060 nm

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C30927EH-01 - Si APD Quadrant - 1.5 mm - 1060 nm
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  • C30927EH-01 - Si APD Quadrant - 1.5 mm - 1060 nm
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Product Details:
Breakdown voltage range (V)350 to 485
Typical breakdown voltage (V)425
Typical gain (M)100
Typical Temperature Coefficient for constant gain (V per degree celsius)2.4
Minimal Responsivity at 1060 nm (A/W)12
Typical Responsivity at 1060 nm (A/W)15
Typical total dark current (nA)100
Maximal total dark current (nA)200
Typical rise and fall time (ns)3
Storage temperature (degree celsius)-60 to 120
Operating temperature (degree celsius)-40 to 60

The C30927EH-01 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused "reach-through" structure.
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C30817EH - Si APD, 0.8mm, TO-5 Low-Profile

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C30817EH - Si APD, 0.8mm, TO-5 Low-Profile
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  • C30817EH - Si APD, 0.8mm, TO-5 Low-Profile
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Product Details:
Active Area0.5 mm2
Active Diameter0.8 mm
Breakdown Voltage375 V
Capacitance2 pF
Dark Current50 nA
Gain120
PackageTO-5, flat window
Rise/Fall Time2 ns
Temperature Coefficient0.7 V per degree celsius
Wavelength400-1100 nm

The C30817EH Silicon Avalanche Photodiode for general-purpose applications is designed using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nm, as well as fast rise and fall times at all wavelengths. Since the fall time characteristics has no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz.
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InGaAs APD that greatly reduces dark current

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InGaAs APD that greatly reduces dark current
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Product Details:
Spectral response range950 to 1700 nm
Peak sensitivity wavelength (typ.)1550 nm
Photosensitivity (typ.)0.8 A/W
Dark current (max.)50 nA
Cutoff frequency (typ.)900 MHz
Terminal capacitance (typ.)2 pF
Breakdown voltage (typ.)65 V
Temperature coefficient of breakdown voltage (typ.)0.1 V/ degree celsius

This InGaAs APD (avalanche photodiode) greatly reduces dark current over existing products by the use of a new device structure and improved processing. The G14858-0020AA is used for distance measurement, low-light-level detection, and so on.
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C30739ECERH-2 - Si APD, Ceramic Carrier, High-Gain

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C30739ECERH-2 - Si APD, Ceramic Carrier, High-Gain
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Product Details:
Active Area5.6x5.6 mm
Breakdown Voltage400, less than 450 V
Capacitance60 pF
Dark Current1.5 nA
GainGreater than 100
Response Time2 ns
Rise & Fall Time2 ns
Wavelength400-700 nm

The C30739ECERH-2 Short-Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) covers the spectral range from less than 400 nm to greater than 700 nm.
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RGB color sensor S6430-01

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Product Details:
Photosensitive area2.8 x 2.4 mm
Spectral response range590 to 720 nm
Dark current (max.)0.02 nA
Terminal capacitance200 pF
Rise time0.5 micro sec
NoteFor red

The S6430-01 is a color sensor designed to respectively detect monochromatic colors of red (λp=660 nm).


Features
-Plastic package (6 × 8 mm)
-Spectral response range: 590 to 720 nm (λp=660 nm)
-Insensitive to near IR range
-High sensitivity: 0.45 A/W Typ. (λ=λp)
-Low dark current
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I2C interface-compatible color sensor (Stick packing)

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I2C interface-compatible color sensor (Stick packing)
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Product Details:
Operating Temperature-40 to +85 deg.C
Storage Temperature-40 to +105 deg.C
Package size3.0 x 4.0 x 1.85 mm
Photosensitive area0.54 x 1.1 mm
Spectral response range (Blue)400 to 540 nm
Spectral response range (Green)455 to 630 nm
Spectral response range (Red)575 to 660 nm
Peak sensitivity wavelength (Blue)460 nm
Peak sensitivity wavelength (Green)530 nm
Peak sensitivity wavelength (Red)615 nm
Photosensitivity Low range (Blue)3.8 counts/lx
Photosensitivity Low range (Green)8.7 counts/lx
Photosensitivity Low range (Red)12.4 counts/lx
Photosensitivity Low range (Correction ch)3.0 counts/lx
Photosensitivity High range (Blue)40.0 counts/lx
Photosensitivity High range (Green)86.0 counts/lx
Photosensitivity High range (Red)122.0 counts/lx
Photosensitivity High range (Correction ch)30.0 counts/lx

The S13683-04DS is a digital color sensor that supports the I2C (inter-integrated circuit) interface. It is sensitive to red (λ=615 nm), green (λ=530 nm), and blue (λ=460 nm) light, and outputs detected results as 16-bit digital data for each color. The photodiode for each color is automatically switched sequentially to perform measurements.
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I2C-compatible color sensor

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Product Details:
Package size1.75 x 1.25 x 0.45 mm
Photosensitive area1.22 x 0.56 mm
Spectral response range (Blue)400 to 540 nm
Spectral response range (Green)455 to 630 nm
Spectral response range (Red)575 to 660 nm
Peak sensitivity wavelength (Blue)460 nm
Peak sensitivity wavelength (Green)530 nm
Peak sensitivity wavelength (Red)615 nm
Photosensitivity Low range (Blue)3.35 counts/lx
Photosensitivity Low range (Green)7.61 counts/lx
Photosensitivity Low range (Red)9.48 counts/lx
Photosensitivity Low range (Correction ch)1.66 counts/lx
Photosensitivity High range (Blue)31.7 counts/lx
Photosensitivity High range (Green)76.2 counts/lx
Photosensitivity High range (Red)94.5 counts/lx
Photosensitivity High range (Correction ch)15.3 counts/lx
Operating temperature-40 to +85 deg.C
Storage temperature-40 to +100 deg.C
NoteThis sensor also has sensitivity in the infrared region (785 to 885 nm).

The S13683-02WT is a color sensor that supports the inter-integrated circuit (I2C) interface. It is sensitive to red (λp=615 nm), green (λp=530 nm), blue (λp=460 nm) light, and outputs detected results as 16-bit digital data for each color. The sensor automatically switches the photodiode of each color in order to perform measurements.
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RGB color sensor S6429-01

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Product Details:
Photosensitive area2.8 x 2.4 mm
Spectral response range480 to 600 nm
Dark current (max.)0.02 nA
Terminal capacitance200 pF
Rise time0.5 micro sec
NoteFor green

The S6429-01 is a color sensor designed to respectively detect monochromatic colors of green (λp=540 nm).


Features
-Plastic package (6 × 8 mm)
-Spectral response range: 480 to 600 nm (λp=540 nm)
-Insensitive to near IR range
-High sensitivity: 0.27 A/W Typ. (λ=λp)
-Low dark current
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For UV to visible, precision photometry suppressed IR sensitivity

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Photosensitive area5.8 x 5.8 mm
Reverse voltage (max.)5 V
Spectral response range340 to 1000 nm
Peak sensitivity wavelength (typ.)720 nm
Photosensitivity (typ.)0.43 A per W
Dark current (max.)20 pA
Rise time (typ.)2 micro sec
Terminal capacitance (typ.)950 pF
Noise equivalent power (typ.)4.2x10-15 W/Hz1/2

Features
- Resin potting type
- Suppressed IR sensitivity
- Low dark current

These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like.

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Product Details:
Photosensitive area2.4 x 2.4 mm
Reverse voltage (max.)5 V
Spectral response range340 to 1000 nm
Peak sensitivity wavelength (typ.)720 nm
Photosensitivity (typ.)0.43 A per W
Dark current (max.)5 pA
Rise time (typ.)0.5 micro sec
Terminal capacitance (typ.)160 pF
Noise equivalent power (typ.)2.1x10-15 W/Hz1/2

Features
- Resin　potting type
- Suppressed IR sensitivity
- Low dark current

These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like.

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For UV to visible, precision photometry suppressed IR sensitivity

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Product Details:
Photosensitive area5.9 x 1.1 mm
Reverse voltage (max.)5 V
Spectral response range340 to 1000 nm
Peak sensitivity wavelength (typ.)720 nm
Photosensitivity (typ.)0.43 A per W
Dark current (max.)5 pA
Rise time (typ.)0.5 micro sec
Terminal capacitance (typ.)170 pF
Noise equivalent power (typ.)2.1x10-15 W/Hz1/2

Features
- Resin potting type
- Suppressed IR sensitivity
- Low dark current

These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like.

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Photosensitive area10 x 10 mm
Reverse voltage (max.)5 V
Spectral response range340 to 1000 nm
Peak sensitivity wavelength (typ.)720 nm
Photosensitivity (typ.)0.43 A/W
Dark current (max.)50 pA
Rise time (typ.)7 micro sec
Terminal capacitance (typ.)3000 pF
Noise equivalent power (typ.)6.7x10-15 W/Hz1/2

Features
- Resin potting window type
- Suppressed IR sensitivity
- Low dark current

These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like.

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For UV to visible precision photometry suppressed near IR sensitivity

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Product Details:
Photosensitive area1.1 x 1.1 mm
Number of elements1
PackageMetal
Package categoryTO-18
CoolingNon-cooled
Reverse voltage (max.)5 V
Spectral response range320 to 1000 nm
Peak sensitivity wavelength (typ.)720 nm
Photosensitivity (typ.)0.36 A per W
Dark current (max.)2 pA
Rise time (typ.)0.15 micro sec
Terminal capacitance (typ.)35 pF
Noise equivalent power (typ.)1.6x10-15 W/Hz1/2

Features
- High UV sensitivity: QE＝75 % (λ=200 nm)
- Suppressed near IR sensitivity
- Low dark current
- High reliability
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For UV to visible, precision photometry suppressed near IR sensitivity

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Product Details:
Photosensitive area5.8 x 5.8 mm
Number of elements1
PackageMetal
Package categoryTO-8
CoolingNon-cooled
Reverse voltage (max.)5 V
Spectral response range320 to 1000 nm
Peak sensitivity wavelength (typ.)720 nm
Photosensitivity (typ.)0.36 A per W
Dark current (max.)20 pA
Rise time (typ.)2 micro sec
Terminal capacitance (typ.)1200 pF
Noise equivalent power (typ.)5x10-15 W/Hz1/2

Features
- High UV sensitivity: QE＝75 % (λ=200 nm)
- Suppressed near IR sensitivity
- Low dark current
- High reliability
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CaliPile Sensor SMD

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CaliPile Sensor SMD
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  • CaliPile Sensor SMD
  • CaliPile Sensor SMD
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Product Details:
Operation Voltage2.6 to 3.6 V
Sensitivity S40400 counts per K (75 counts per K for TPiS 1S 0185)
Noise8 Counts per K
Time Constant30 ms (15 ms for TPiS 1S 0185)
Housing with optical windowSMD 4.4x2.6
Field of View120 degree

The first and only multi-function Thermopile Sensor of it's kind, the Excelitas CaliPile® Sensor (TPiS 1S 1385) represents a new generation of intelligent IR Sensors, capable of motion detection, presence monitoring and temperature measurement.
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Long wavelength type (cutoff wavelength: 2.05 micro m)

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Long wavelength type (cutoff wavelength: 2.05 micro m)
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Product Details:
CoolingTwo-stage TE-cooled
Spectral response range0.9 to 2.05 micro m
Peak sensitivity wavelength (typ.)1.95 micro m
Photosensitivity (typ.)1.2 A per W
Dark current (max.)50 nA
Cutoff frequency (typ.)17 MHz
Terminal capacitance (typ.)195 pF

Features
- Cutoff wavelength: 2.05 μm
- Two-stage TE-cooled
- Low cost
- Low noise
- High sensitivity
- High reliability
- High-speed response
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For UV to visible, precision photometry, suppressed near IR sensitivity

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Product Details:
Model NumberS1226 - 8BQ
High UV sensitivityQEequal to 75 Percent (Lambda=200 nm)
Spectral Range190 to 1000 nm
Photosensitive area5.8 x 5.8 mm
CoolingNon-cooled
Reverse voltage (max.)5 V
Dark current (max.)20 pA
Terminal capacitance (typ.)1200 pF

Measurement condition : Ta=25 ℃, Typ., Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted
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