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Laser Diode Arrays

Our product range includes a wide range of laser diode module, laser diode array (golden bullet), photodiode for vuv (vacuum uv) detection, photodiode arrays combined with signal processing ic for x-ray detection, integrates photodiode for precision photometry with low-noise amp and 32 element ingaas array.

Laser Diode module

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Laser Diode module
  • Laser Diode module
  • Laser Diode module
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Approx. Rs 1,00,000 / PieceGet Latest Price

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Product Details:
Voltage3V
ColorBlack
Output Power2 amp
Working Voltage12 V
Country of OriginMade in India

RPMC Lasers offers one of the widest wavelength selections of laser diode modules available ranging from the UV through the IR. Our multimode and single mode diode laser modules are available in both fiber-coupled and free space configurations in both OEM and turnkey packages.
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Laser Diode Array (Golden Bullet)

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Laser Diode Array  (Golden Bullet)
  • Laser Diode Array  (Golden Bullet)
  • Laser Diode Array  (Golden Bullet)
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Approx. Rs 1,50,000 / PieceGet Latest Price

Product Details:
Power5mW
Supply Voltage Range220 V
Laser TypeLaser Diode
Country of OriginMade in India
Frequency60 hz

CEO's laser diode arrays are offered with optional fast axis or fast and slow axis lenses.  Standard lenses are available that reduce fast axis divergence to < 0.5 degrees and slow axis divergence to < 4 degrees.
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Photodiode for VUV (Vacuum UV) detection

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Photodiode for VUV (Vacuum UV) detection
  • Photodiode for VUV (Vacuum UV) detection
  • Photodiode for VUV (Vacuum UV) detection
  • Photodiode for VUV (Vacuum UV) detection
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Product Details:
Model NumberS8553
Photosensitive area18 x 18 mm
Reverse voltage (max.)5 V
Spectral response range190-1000 nm
Dark current (max.)5000 pA
Terminal capacitance (typ.)8000 pF

The S8553 is a VUV (Vacuum UV) photodiode suitable for detection of ArF excimer lasers (λ=193 nm). Designed to provide optimal performance in the VUV range, this photodiode offers more stable sensitivity even after long exposure to VUV radiation compared with conventional types.
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Photodiode arrays combined with signal processing IC for X-ray detection

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Photodiode arrays combined with signal processing IC for X-ray detection
  • Photodiode arrays combined with signal processing IC for X-ray detection
  • Photodiode arrays combined with signal processing IC for X-ray detection
  • Photodiode arrays combined with signal processing IC for X-ray detection
  • +1 Photodiode arrays combined with signal processing IC for X-ray detection
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Product Details:
Image size102.4 x 0.8 mm
Number of effective pixels128 pixels
Pixel size0.7 x 0.8 mm
Pixel pitch0.4 mm
Supply voltage3.3 V
ScintillatorPhosphor sheet
Peak sensitivity wavelength720 nm
Line rate max7568 lines per sec
Charge amp feedback capacitance0.125 pF
NoteFor X-ray, High sensitivity type

The S13886-128G is a series are photodiode array with amplifiers having a phosphor sheet attached to the photosensitive area for X-ray detection. Improvement in the signal processing IC chip has achieved higher sensitivity compared to the previous products (S11865 series).
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Integrates photodiode for precision photometry with low-noise amp

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Integrates photodiode for precision photometry with low-noise amp
  • Integrates photodiode for precision photometry with low-noise amp
  • Integrates photodiode for precision photometry with low-noise amp
  • Integrates photodiode for precision photometry with low-noise amp
  • +3 Integrates photodiode for precision photometry with low-noise amp
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Product Details:
Spectral response range320 to 2600 nm
Peak sensitivity wavelength940 (Si), 2300 (InGaAs) nm
OutputAnalog
Cutoff frequencyLow range: 100000 High range: 10000 Hz
Supply voltage+-5 to +-12 V
Measurement conditionTa is equal to 25 degree celsius, Vs=+-12 V, unless otherwise noted

The C10439 series photodiode modules are high-precision photodetectors that integrate a photodiode and a current-to-voltage amplifi er. The output from these photodiode modules is an analog voltage and can be easily checked with a voltmeter, etc. Since their sensitivity is switchable between two ranges (High/Low), highly accurate output can be obtained by selecting the proper sensitivity range that matches the light level to be detected.
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32 element InGaAs array

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32 element InGaAs array
  • 32 element InGaAs array
  • 32 element InGaAs array
  • 32 element InGaAs array
  • 32 element InGaAs array
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Product Details:
Spectral response range0.9 to 1.7 micro m
Peak sensitivity wavelength (typ.)1.55 micro m
Photosensitivity (typ.)0.95 A per W
Dark current (max.)1.25 nA
Cutoff frequency (typ.)60 MHz
Terminal capacitance (typ.)35 pF
Measurement condition Typ.Ta is equal to 25 degree celsius, unless otherwise noted

Features
-32-element array
-Designed for simple measurement
-Large photosensitive area size
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Pulsed Laser Diode (PLD)

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Pulsed Laser Diode (PLD)
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Approx. Rs 33,500 / PieceGet Latest Price

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Product Details:
Minimum Order Quantity1 Piece
BrandHAMAMATSU
Part NumberL11854-307-05
Type numberL11854-307-05
Type3 Stack PLDs
Pulsed forward current10 A
Pulse duration100 ns
Duty ratio0.075 %
Peak emission wavelength min.895 nm
Peak emission wavelength typ.905 nm
Peak emission wavelength max.915 nm
Pulsed radiant power typ.21 W
Spectral radiation half bandwidth typ.6 nm
Operating voltage typ.11 V
Rise time max.2 ns
Package dia.5.6CD

Type numberL11854-307-05
Type3 Stack PLDs
Pulsed forward current10 A
Pulse duration100 ns
Duty ratio0.075 %
Operating temperature- 40 to + 85 ???
Storage temperature- 40 to + 125 ???
Peak emission wavelength min.895 nm
Peak emission wavelength typ.905 nm
Peak emission wavelength max.915 nm
Pulsed radiant power typ.21 W
Spectral radiation half bandwidth typ.6 nm
Operating voltage typ.11 V
Rise time max.2 ns
Emitting width70 × 10 μm
Beam spread angle _parallel min.7 °
Beam spread angle _parallel typ.11 °
Beam spread angle _parallel max.15 °
Beam spread angle _vertical min.18 °
Beam spread angle _vertical typ.23 °
Beam spread angle _vertical max.28 °
Lasing threshold current typ.0.4 A
Packagedia. 5.6CD

Additional Information:

  • Delivery Time: 7 Days
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    Silver Bullet Laser Diode Array Submodules

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    Silver Bullet Laser Diode Array Submodules
    • Silver Bullet Laser Diode Array Submodules
    • Silver Bullet Laser Diode Array Submodules
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    Approx. Rs 10,00,000 / PieceGet Latest Price

    Product Details:
    Mounting TypeSurface Mount
    Supply Voltage Range25. A
    Laser TypeDiode laser
    Usage/ApplicationDiode solutions serve
    Optical Output Power12 watts
    Country of OriginMade in India

    Silver Bullet diode laser submodules (ASMs) are offered with optional soldering kits. CEO® can also attach Silver Bullets to customer-supplied heat exchanger to make completely packaged laser diode arrays. Extreme care should be taken when handling these components. We recommend that they be only used by customers who are experienced in the handling and packaging of laser diode bars

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    Unmounted Laser Diode Bars

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    Unmounted Laser Diode Bars
    • Unmounted Laser Diode Bars
    • Unmounted Laser Diode Bars
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    Approx. Rs 1,00,000 / PieceGet Latest Price

    Product Details:
    Mounting TypeSurface Mount
    Supply Voltage Range200 W
    Usage/ApplicationDPSS laser
    Optical Output Power10.0, 40.0, 60.0, 80.0, 120.0, 200.0, 250.0, 350.0
    Country of OriginMade in India
    High-power792nm

    Unmounted laser diode bars are available at a variety of wavelengths in CW or QCW versions. Extreme care should be taken when handling these components. We recommend that they be only used by customers who are experienced in the handling and packaging of laser diode bars.
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    CW Laser Diode (CWLD)

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    CW Laser Diode (CWLD)
    • CW Laser Diode (CWLD)
    • CW Laser Diode (CWLD)
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    Approx. Rs 32,100 / unitGet Latest Price

    Product Details:
    Minimum Order Quantity1 unit
    BrandHAMAMATSU
    Part NumberL8763-42
    Type numberL8763-42
    TypeLateral Multimode LDs (broad stripe)
    Peak emission wavelength min.Peak emission wavelength min. 798 nm
    Peak emission wavelength typ.808 nm
    Peak emission wavelength max.810 nm
    Output power typ.1 W
    Operating current typ.1.2 A
    Spectral radiation half bandwidth typ.2 nm
    Operating voltage typ.2 V
    Lasing threshold current typ.0.35 A
    Package dia.9.0CD

    Type numberL8763-42
    TypeLateral Multimode LDs (broad stripe)
    Operating temperature0 to + 30 ???
    Storage temperature- 30 to + 80 ???
    Peak emission wavelength min.798 nm
    Peak emission wavelength typ.808 nm
    Peak emission wavelength max.810 nm
    Output power typ.1 W
    Operating current typ.1.2 A
    Spectral radiation half bandwidth typ.2 nm
    Operating voltage typ.2 V
    Emitting width50 × 1 μm
    Beam spread angle _parallel typ.8 °
    Beam spread angle _vertical typ.32 °
    Lasing threshold current typ.0.35 A
    Packagedia. 9.0CD

    Additional Information:

  • Delivery Time: 7 Days
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    Si photodiode with BNC connector

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    Si photodiode with BNC connector
    • Si photodiode with BNC connector
    • Si photodiode with BNC connector
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    Product Details:
    Model NumberS2281-01
    CoolingNon-cooled
    Reverse voltage (max.)5 V
    Spectral response range190 to 1000 nm
    Dark current (max.)300 pA

    The S2281-01 is a Si photodiode sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329-01 photosensor amplifier (S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C9329-01 is used with the gain set to the "M" range.).
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    Generation 3 Triple-Cavity 225 micro m SMD PLD

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    Generation 3 Triple-Cavity 225 micro m SMD PLD
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    Product Details:
    Pulsed laser diode905 nm
    Output power120 W
    Power slope3 W per A
    Contact stripe width225 micro m

    The Excelitas Generation 3 TPG3AD1S09 Pulsed Laser Diode is a high-efficiency 905 nm edge-emitting laser diode in an SMD package. The TPG3AD1S09 features a power slope of 3 W/A and enhanced output power of 120 W when operated at 40 A, extending the detection range to enable applications of tomorrow.
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    Compact 16-element APD array suitable for various light level detection

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    Compact 16-element APD array suitable for various light level detection
    • Compact 16-element APD array suitable for various light level detection
    • Compact 16-element APD array suitable for various light level detection
    • Compact 16-element APD array suitable for various light level detection
    • +1 Compact 16-element APD array suitable for various light level detection
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    Product Details:
    Number of channel16 ch
    Photosensitive area/ch0.15 x 0.43 mm
    Spectral response range420 to 1150 nm
    Peak sensitivity wavelength840 nm
    Photosensitivity36 kV/W
    High Band Cut-off Frequency180 MHz

    The S14137-01CR is a compact optical device that integrates a 16-element APD array and a preamp. The incident light pulse is converted into a voltage pulse, and then the converted pulse is output. It has a built-in DC feedback circuit for reducing the effects of background light. The parallel output 16-element array enables simultaneous measurement of all pixels.
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    Simple evaluation driver circuit for non-cooled MPPC

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    Simple evaluation driver circuit for non-cooled MPPC
    • Simple evaluation driver circuit for non-cooled MPPC
    • Simple evaluation driver circuit for non-cooled MPPC
    • Simple evaluation driver circuit for non-cooled MPPC
    • +2 Simple evaluation driver circuit for non-cooled MPPC
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    Product Details:
    CoolingNon-cooled
    Measurement conditionTa is equal to 25 degree celsius
    Supply Voltage+- 5.8 V
    Operating Temperature-20 to +60 degree celsius
    Storage Temperature-20 to +80 degree celsius

    The C14450 is a driver circuit for simple evaluation of non-cooled visible/near-infrared MPPC and power supply C11204-01 for MPPC. MPPC evaluation is possible by mounting an MPPC in the socket of the sensor circuit board.
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    Simple evaluation driver circuit for non-cooled MPPC

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    Simple evaluation driver circuit for non-cooled MPPC
    • Simple evaluation driver circuit for non-cooled MPPC
    • Simple evaluation driver circuit for non-cooled MPPC
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    Product Details:
    CoolingNon-cooled
    Measurement conditionTa is equal to 25 degree celsius

    The C12332-02 is a driver circuit for simple evaluation of non-cooled MPPC and power supply C11204-01 for MPPC. MPPC evaluation is possible by mounting an MPPC in the socket of the sensor circuit board.
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    C30884EH - Si APD, 1mm, TO-5

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    C30884EH - Si APD, 1mm, TO-5
    • C30884EH - Si APD, 1mm, TO-5
    • C30884EH - Si APD, 1mm, TO-5
    • C30884EH - Si APD, 1mm, TO-5
    • C30884EH - Si APD, 1mm, TO-5
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    Product Details:
    High Quantum Efficiency85 percent typical at 900 nm, 10 percent typical at 1060 nm
    Spectral Response Range(10 percent Points) 400 to 1100 nm
    Rise time1 ns
    Fall time1 ns
    Wide operating Temperature Range-40 degree celsius to 70 degree celsius

    The C30884EH Silicon Avalanche Photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz.
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    UV TRON Driving circuit

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    UV TRON Driving circuit
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    Approx. Rs 8,300 / NumberGet Latest Price

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    Product Details:
    Minimum Order Quantity1 Number
    BrandHAMAMATSU
    Output signal50V, 80 mA
    UVTRON Supply Voltage350 V
    Suitable UVTRONR9533, R2868
    CurrentC10807 mA
    ConsumptionC10807-01 mA
    WeightApprox 12 g

    C10807 series was developed for UVTRON driving as alternative to C3704, that is also used as singnal processing circuits. By using a double-sided printed circuit board we cut the area size to half that of conventional drive circuits. 

    Additional Information:

  • Item Code: C10807
  • Delivery Time: 7 Days
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    Conductively Cooled Laser Diode Arrays

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    Conductively Cooled Laser Diode Arrays
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    Approx. Rs 1,00,000 / PieceGet Latest Price

    Product Details:
    Mounting TypeSurface Mount
    Supply Voltage Range5.85
    Usage/ApplicationDiode solutions serve
    Optical Output Power1500 W.
    Country of OriginMade in India
    output powerof 115 W

    These Laser Diode Arrays are offered on a variety of heat sink package types that are conductively cooled. The arrays should be mounted to a heat sink with a recommended base plate temperature of 25° C.  In addition to the types of packages listed here, CEO can customzie a package to meet your specific needs.
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    Fiber Coupled Arrays

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    Fiber Coupled Arrays
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    Approx. Rs 10,000 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity1 Piece
    Size [mm]12 x 12
    Lens arrangementm x n, hexagonal grid or others
    Fiber typeMM (Step index or Graded index)
    Wavelength [nm]850, 980, 1310, 1550 or on request
    Working distance[mm] Typ. 25 or on request
    Operating temperature [ DegreeC]-40 to +85

    Fiber coupled arrays feature high brightness fiber coupling, small footprint and very high power in passively cooled packages.  They deliver 6W to 120W of laser power through 0.22 NA multimode optical fibers with 100µm to 1000 µm core.

    Additional Information:

  • Delivery Time: 5-7 weeks
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    Golden Bullet Laser Diode Array Submodules

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    Golden Bullet Laser Diode Array Submodules
    • Golden Bullet Laser Diode Array Submodules
    • Golden Bullet Laser Diode Array Submodules
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    Approx. Rs 1,00,000 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity1 Piece
    Operating Current20W at 25'C Heat Sink
    Threshold Current25'C Heat Sink
    Spectral Width20W at 25'C Heat Sink
    Center Wavelength20W at 25'C Heat Sink
    CW Power Output26A at 25'C Heat Sink
    Wavelength Tolerance20W at 25'C Heat Sink

    Golden Bullet diode laser submodules (ASM) feature proprietary expansion matched packaging materials and the use of hard solder - making them ideally suited for operation in demanding (>500 microsecond long) pulsed and/or high duty cycle laser applications.

    Additional Information:

  • Delivery Time: 5-7 weeks
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    Microchannel Cooled Laser Diodes

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    Microchannel Cooled Laser Diodes
    • Microchannel Cooled Laser Diodes
    • Microchannel Cooled Laser Diodes
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    Approx. Rs 10,00,000 / PieceGet Latest Price

    Product Details:
    Power50mW
    Supply Voltage Range220 V
    Laser TypeCooled Laser
    Country of OriginMade in India
    Frequency60 Hz

    CEO's new, patented, IC3 cooler eliminates all the of the drawbacks of its copper based predecessors.  The use of proprietary ceramic materials instead of copper eliminates the requirement for de-ionized water plus the associated cost of expensive DI re-circulating water chiller system.  It also offers dramatically increased operating lifetimes.
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    Water Cooled Laser Diode Arrays

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    Water Cooled Laser Diode Arrays
    • Water Cooled Laser Diode Arrays
    • Water Cooled Laser Diode Arrays
    • Water Cooled Laser Diode Arrays
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    Approx. Rs 1,00,000 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity1 Piece
    QCW Peak Power Output55A, 1 mS, 50 Hz
    Operating Current500W DegreeC Heat Sink
    Threshold Current25 DegreeC Heat Sink
    Center Wavelength500W at 25 DegreeC Heat Sink
    Wavelength Tolerance500W at 25 DegreeC Heat Sink
    Forward Current70A
    Reverse Voltage3V

    Many types of water-cooled packages are offered including linear arrays and diode stacks. Now offering Lee Laser™ replacement arrays for a fraction of the price!

    Additional Information:

  • Delivery Time: 5-7 weeks
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