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Ultra Fast Detectors
The UPD series of ultra fast photo detectors are best suited for measuring of optical waveforms from DC to 10 GHz. various models feature rise times from 30 to 500 ps and cover the spectral range from 170 to 1700 nm. All photo detectors are enclosed incompact and solid aluminum housings and can be biased with a battery or an external power supply. The UV-extended versions of the silicontype photo detectors are the only commercial products that cover the spectral range from 170 to 1100 nm.
Si Photodiode
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Approx. Rs 1,220 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S2386-44K |
| Photosensitive area | 3.6 x 3.6 mm |
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Photosensitive area | 3.6 × 3.6 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.6 A/W |
| Dark current (max.) | 20 pA |
| Rise time (typ.) | 3.6 μs |
| Terminal capacitance (typ.) | 1600 pF |
| Noise equivalent power (typ.) | 1.4×10-15 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted |
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Si Photodiode
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Approx. Rs 10,040 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S1337-1010BQ |
| Made in | Japan |
| Photosensitive area | 10 x 10 mm |
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Photosensitive area | 10 × 10 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 200 pA |
| Rise time (typ.) | 3 μs |
| Terminal capacitance (typ.) | 1100 pF |
| Noise equivalent power (typ.) | 1.8×10-14 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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HAMAMATSU InGaAs APD
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Approx. Rs 60,500 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | G8931-20 |
| Brand | HAMAMATSU |
| Breakdown voltage (typ.) | 55 V |
| Terminal capacitance (typ.) | 1.5 pF |
| Cutoff frequency (typ.) | 900 MHz |
| Dark current (max.) | 200 nA |
| Photosensitivity (typ.) | 0.9 A/W |
| Peak sensitivity wavelength (typ.) | 1550 nm |
| Spectral response range | 950 to 1700 nm |
| Package Category | TO-18 |
| Package | Metal |
| Number of elements | 1 |
| Number of elements | 1 |
|---|---|
| Photosensitive area | φ0.2 mm |
| Package | Metal |
| Package Category | TO-18 |
| Spectral response range | 950 to 1700 nm |
| Peak sensitivity wavelength (typ.) | 1550 nm |
| Photosensitivity (typ.) | 0.9 A/W |
| Dark current (max.) | 200 nA |
| Cutoff frequency (typ.) | 900 MHz |
| Terminal capacitance (typ.) | 1.5 pF |
| Breakdown voltage (typ.) | 55 V |
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C30954EH - Si APD, 0.8mm, TO-5 Package
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Product BrochureProduct Details:| Active Area | 0.5 mm2 |
| Active Diameter | 0.8 mm |
| Capacitance | 2pF |
| Dark Current | 50nA |
| Gain | 120 |
| Package | TO-5 |
| Peak Sensitivity Wavelength | 900 nm |
| Rise/Fall Time | 2ns |
| Temperature Coefficient | 2.4 V per degree celsius |
| Vop Range | 275-450 V |
| Wavelength | 400-1100 nm |
The C30954EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 0.8 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
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Photodiode array for DWDM monitor
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Product BrochureProduct Details:| Spectral response range | 0.9 to 1.7 micro m |
| Peak sensitivity wavelength (typ.) | 1.55 micro m |
| Photosensitivity (typ.) | 0.95 A per W |
| Dark current (max.) | 0.2 nA |
| Cutoff frequency (typ.) | 1000 MHz |
| Terminal capacitance (typ.) | 1.4 pF |
| Measurement condition | Typ. Ta is equal to 25 degree celsius, unless otherwise noted |
Features
- 250 μm pitch, 40 ch parallel readout
- Low crosstalk
- Precise chip position tolerance: ±0.05 mm
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Integrates a Si photodiode for precision photometry with low-noise amp
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Product BrochureProduct Details:| Photosensitive area | 5.8 x 5.8 mm |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength | 960 nm |
| Output | Analog |
| Cutoff frequency | Low range: 1000 High range: 10 Hz |
| Supply voltage | +-5 to +-12 V |
| Measurement condition | Ta is equal to 25 degree celsius, Vcc=+-12 V, unless otherwise noted |
C10439-02 photodiode module is a high-precision photodetector that integrates a Si photodiode and a current-to-voltage amplifier. The output from the photodiode module is an analog voltage and can be easily checked with a voltmeter, etc. Since their sensitivity is switchable between two ranges (High/Low), highly accurate output can be obtained by selecting the proper sensitivity range that matches the light level to be detected.
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Si Photodiode S2386-18l
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Approx. Rs 1,118 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S2386-18L |
| Made in | Japan |
| Package | Metal |
| Package category | Japan |
| Cooling | Non-cooled |
| Number of elements | 1 |
| Photosensitive area | 1.1 × 1.1 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-18, with lens |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.6 A/W |
| Dark current (max.) | 2 pA |
| Rise time (typ.) | 0.4 μs |
| Terminal capacitance (typ.) | 140 pF |
| Noise equivalent power (typ.) | 6.8×10-16 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted |
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Si Photodiode S12698
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Approx. Rs 6,530 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S12698 |
| Made in | Japan |
| Package | Metal |
| Package category | Japan |
| Cooling | Non-cooled |
| Number of elements | 1 |
| Photosensitive area | 1.1 × 1.1 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-18 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1000 nm |
| Peak sensitivity wavelength (typ.) | 800 nm |
| Photosensitivity (typ.) | 0.38 A/W |
| Dark current (max.) | 10 pA |
| Rise time (typ.) | 0.1 μs |
| Terminal capacitance (typ.) | 25 pF |
| Noise equivalent power (typ.) | 1×10-14 W/Hz1/2 |
| Measurement condition | Ta=25 ???, Typ., Photosensitivity: λ=800 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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Si Photodiode S2386-5k
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Approx. Rs 1,140 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S2386-5K |
| Made in | Japan |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Number of elements | 1 |
| Photosensitive area | 2.4 × 2.4 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.6 A/W |
| Dark current (max.) | 5 pA |
| Rise time (typ.) | 1.8 μs |
| Terminal capacitance (typ.) | 730 pF |
| Noise equivalent power (typ.) | 9.6×10-16 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted |
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Si Photodiode, Part Number: S6428-01
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Approx. Rs 1,120 / PieceGet Latest Price
Product BrochureProduct Details:| Part Number | S6428-01 |
| Made in | Japan |
| Package material | Plastic |
| Photosensitive area | 2.8 x 2.4 mm |
| Spectral response range | 400 to 540 nm |
| Dark current (max.) | 0.02 nA |
Package materialPlasticPhotosensitive area2.8 x 2.4 mmSpectral response range400 to 540 nmDark current (max.)0.02 nATerminal capacitance200 pFRise time0.5 μsNoteFor blueMeasurement conditionTyp. Ta=25 deg.C, unless otherwise noted
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Si Pin Photodiode
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Approx. Rs 450 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S1223 |
| Photosensitive area | 2.4 x 2.8 mm |
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.52 A/W |
| Dark current (max.) | 10000 pA |
| Cutoff frequency (typ.) | 30 MHz |
| Terminal capacitance (typ.) | 10 pF |
| Noise equivalent power (typ.) | 9.4x10-15 W/Hz1/2 |
| Measurement condition | Ta=25 ???, Typ., Photosensitivity: λ=780 nm, Dark current: VR=20 V, Cutoff frequency: VR=20 V, Terminal capacitance: VR=20 V, f=1 MHz, Noise equivalent power: VR=20 V, λ=λp, unless otherwise noted |
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Si Pin Photodiode
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Approx. Rs 660 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S5821 |
| Photosensitive area | 1.2 mm |
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-18 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 20 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.52 A/W |
| Dark current (max.) | 2000 pA |
| Cutoff frequency (typ.) | 25 MHz |
| Terminal capacitance (typ.) | 3 pF |
| Noise equivalent power (typ.) | 6.7x10-15 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=780 nm, Dark current: VR=10 V, Cutoff frequency: VR=10 V, Terminal capacitance: VR=10 V, f=1 MHz, Noise equivalent power: VR=10 V, λ=λp, unless otherwise noted |
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Si PIN Photodiode
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Approx. Rs 445 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Package | Plastic |
| Package Category | SIP type (with lens) |
| Peak emission wavelength (typ.) | 940 nm |
| Spectral half-width (typ.) | 60 nm |
| Radiant flux (typ.) | 1.4 mW |
| Forward voltage (typ.) | 1.25 V |
PackagePlasticPackage CategorySIP type (with lens)Peak emission wavelength (typ.)940 nmSpectral half-width (typ.)60 nmRadiant flux (typ.)1.4 mWForward voltage (typ.)1.25 VMeasurement conditionTyp. Ta=25 ???, unless otherwise noted
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SI Photodiode, Part Number: S9702
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Approx. Rs 1,020 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S9702 |
| Product type | RGB photodiode |
| Package material | Plastic |
| Package type | Surface mount type |
| Package size | 3.0 x 4.0 x 2.0 mm |
| Photosensitive area | 1 x 1 mm |
| Spectral response range (Blue) | 400 to 540 nm |
| Spectral response range (Green) | 480 to 600 nm |
| Spectral response range (Red) | 590 to 720 nm |
| Peak sensitivity wavelength (Blue) | 460 nm |
| Peak sensitivity wavelength (Green) | 540 nm |
| Peak sensitivity wavelength (Red) | 620 nm |
| Photosensitivity (Blue) | 0.18 A/W |
| Photosensitivity (Green) | 0.23 A/W |
| Photosensitivity (Red) | 0.16 A/W |
| Dark current (max.) | 0.05 nA |
| Product type | RGB photodiode |
|---|---|
| Package material | Plastic |
| Package type | Surface mount type |
| Package size | 3.0 x 4.0 x 2.0 mm |
| Photosensitive area | 1 x 1 mm |
| Spectral response range (Blue) | 400 to 540 nm |
| Spectral response range (Green) | 480 to 600 nm |
| Spectral response range (Red) | 590 to 720 nm |
| Peak sensitivity wavelength (Blue) | 460 nm |
| Peak sensitivity wavelength (Green) | 540 nm |
| Peak sensitivity wavelength (Red) | 620 nm |
| Photosensitivity (Blue) | 0.18 A/W |
| Photosensitivity (Green) | 0.23 A/W |
| Photosensitivity (Red) | 0.16 A/W |
| Dark current (max.) | 0.05 nA |
| Terminal capacitance | 12 pF |
| Rise time | 0.1 μs |
| Operating temperature | -25 to +85 deg.C |
| Storage temperature | -40 to +85 deg.C |
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HAMAMATSU Si Photodiode
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Approx. Rs 5,650 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S1336-5BQ |
| Brand | HAMAMATSU |
| Photosensitive area | 2.4 x 2.4 mm |
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 30 pA |
| Terminal capacitance (typ.) | 65 pF |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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Si APD , Part Number: S12426-02
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Approx. Rs 7,000 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S12426-02 |
| Type | High-speed type (for 900 nm, Low bias operation) |
| Package | Metal |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 840 nm |
| Spectral response range | 400 to 1100 nm |
| Photosensitivity (typ.) | 0.52 A/W |
| Dark current (max.) | 1 nA |
| Cutoff frequency (typ.) | 650 MHz |
| Terminal capacitance (typ.) | 0.5 pF |
| Breakdown voltage (typ.) | 160 V |
| Gain (typ.) | 100 |
| Type | High-speed type (for 900 nm, Low bias operation) |
|---|---|
| Photosensitive area | φ0.2 mm |
| Package | Metal |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 840 nm |
| Spectral response range | 400 to 1100 nm |
| Photosensitivity (typ.) | 0.52 A/W |
| Dark current (max.) | 1 nA |
| Cutoff frequency (typ.) | 650 MHz |
| Terminal capacitance (typ.) | 0.5 pF |
| Breakdown voltage (typ.) | 160 V |
| Temperature coefficient of breakdown voltage (typ.) | 1.1 V/??? |
| Gain (typ.) | 100 |
| Measurement condition | Typ. Ta=25 ???, unless otherwise noted, Photosensitivity: λ=900 nm, M=1 |
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Hamamatsu Si Photodiode
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Approx. Rs 8,970 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | S1337-66BR |
| Brand | HAMAMATSU |
| Photosensitive area | 5.8 x 5.8 mm |
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 340 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.62 A/W |
| Dark current (max.) | 100 pA |
| Terminal capacitance (typ.) | 380 pF |
| Photosensitive area | 5.8 × 5.8 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 340 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.62 A/W |
| Dark current (max.) | 100 pA |
| Rise time (typ.) | 1 μs |
| Terminal capacitance (typ.) | 380 pF |
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Si Pin Photodiode
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Approx. Rs 790 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | S5821-03 |
| Brand | HAMAMATSU |
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-18, with lens |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 20 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.52 A/W |
| Dark current (max.) | 2000 pA |
| Cutoff frequency (typ.) | 25 MHz |
| Terminal capacitance (typ.) | 3 pF |
The S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible near infrared light. The S5821 series provides high performance and relibility at a low cost.
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Si Photodiode, Part Number: S1337-16BQ
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Approx. Rs 4,200 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | S1337-16BQ |
| Photosensitive area | 5.9 x 1.1 mm |
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 50 pA |
| Terminal capacitance (typ.) | 65 pF |
| Photosensitive area | 5.9 × 1.1 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 50 pA |
| Rise time (typ.) | 0.2 μs |
| Terminal capacitance (typ.) | 65 pF |
| Noise equivalent power (typ.) | 1×10-14 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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Ultra Fast Photodiode
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Minimum Order Quantity | 1 Piece |
| Ultra High | Speed Operation |
| Rise Times | starting from 15 ps |
| Bandwidths | up to 25 GHz |
| Spectral Ranges | 170 - 2600 nm (UV to IR) |
| Battery or External | Power Supply |
| Compact | Design |
Rise time= < 200 ps – 500 ps.
Wavelength range=300 nm – 1100 nm.
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Ultra Fast Ge-Photodiode
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Minimum Order Quantity | 1 Piece |
| Brand | HAMAMATSU |
| Ultra High | Speed Operation |
| Rise Times starting from | starting from 15 ps |
| Bandwidths | up to 25 GHz |
| Spectral Ranges | 170 - 2600 nm (UV to IR) |
| Battery or External | Power Supply |
| Compact | Design |
Rise time= 300 ps,
Wavelength range= 500nm -1800 nm
Rise time= 300 ps,
Wavelength range= 500nm -1800 nm
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Photodiode molded into clear plastic package
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Product Details:| Photosensitive area | 1.3 x 1.3 mm |
| Number of elements | 1 |
| Package | Plastic |
| Package category | Filterless type |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 10 V |
| Spectral response range | 320 to 840 nm |
| Peak sensitivity wavelength (typ.) | 540 nm |
| Photosensitivity (typ.) | 0.3 A per W |
| Dark current (max.) | 50 pA |
| Rise time (typ.) | 2 micro sec |
| Terminal capacitance (typ.) | 700 pF |
Features
-Visible range (Filterless type)
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UV Blaster Box
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Approx. Rs 30,000 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Power | 11 Watts |
| Wavelength | 254 nm Peak |
| Country of Origin | Made in India |
| Lamp | UV-C & Hydroxyl |
| Body Material | Powder Coated MS |
| UVC Tube | 3 UVC Tube & 1 Hydroxyl Radical Tube |
| Operating Voltage | 230VAC |
| Frequency | 50 Hz |
UV lamps are optimally placed to eliminate blind spots and corners.
The operator is protected from UV radiation by safety controls to ensure that lamps cannot be activated until the cabinet door is securely closed.
Given system has provision to completely disinfect the laptop in open condition.
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Linear Array Ccd Sensor
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Number of LEDs | 7 |
| Country of Origin | Made in India |
| Power | Electric |
| Frequency | 60 Hz |
| Type | Array |
Advanced high-sensitivity CCD-array complete with driving electronics offers a cost-effective solution to light-measurement applications. Pixel=2048 Pixel,
Wavelength Range= 300 – 1100 nm
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Broadband Amplifier
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Approx. Rs 10,00,000 / UnitGet Latest Price
Product Details:| Minimum Order Quantity | 1 Unit |
| Gain | + 20 dB |
| Bandwidth | 1 GHz - 4 MHz |
| Broadband | Amplifier |
| Ultra | Fast diductor |
Gain= + 20 dB.
Bandwidth= 1 GHz - 4 MHzGain= + 20 dB.
Bandwidth= 1 GHz - 4 MHz
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Infrared - To - Visible Converter
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Approx. Rs 10,000 / PieceGet Latest Price
Product BrochureProduct Details:| P/N | VS-IR |
| PRODUCT WEIGHT (LBS) | 0.7 |
| PART TYPE | Disc |
| TARGET SIZE | 1.37 inches [35 mm] diameter |
| SPECTRAL SENSITIVITY | 800-1,700nm |
| INCLUDES | Stand |
For viweing IR high-power Nd: YAG- lasers.
Special ceramics. Nd:YAG lasers are used in manufacturing for engraving, etching, or marking a variety of metals and plastics, or for metal surface enhancement processes like laser peening.
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Ultra Fast Ingaas- Photodiode
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Mounting Type | Through Hole |
| Usage/Application | DPSS laser |
| Country of Origin | Made in India |
| PD | typical to 0.1 dB |
| Rise time | < 15 ps |
| bandwidth | > 25 GHz |
Rise time= 70 ps
Wavelength range= 800-1700 nm
Connector Type=SMA
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New Age Instruments & Materials Private Limited
New Age Instruments & Materials Private Limited
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