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Ultra Fast Detectors
The UPD series of ultra fast photo detectors are best suited for measuring of optical waveforms from DC to 10 GHz. various models feature rise times from 30 to 500 ps and cover the spectral range from 170 to 1700 nm. All photo detectors are enclosed incompact and solid aluminum housings and can be biased with a battery or an external power supply. The UV-extended versions of the silicontype photo detectors are the only commercial products that cover the spectral range from 170 to 1100 nm.
Si Photodiode S2386-18l
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Approx. Rs 1,118 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S2386-18L |
| Package category | Japan |
| Cooling | Non-cooled |
| Number of elements | 1 |
| Made in | Japan |
| Package | Metal |
| Photosensitive area | 1.1 × 1.1 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-18, with lens |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.6 A/W |
| Dark current (max.) | 2 pA |
| Rise time (typ.) | 0.4 μs |
| Terminal capacitance (typ.) | 140 pF |
| Noise equivalent power (typ.) | 6.8×10-16 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted |
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Si Photodiode S12698
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Approx. Rs 6,530 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S12698 |
| Cooling | Non-cooled |
| Number of elements | 1 |
| Made in | Japan |
| Package | Metal |
| Package category | Japan |
| Photosensitive area | 1.1 × 1.1 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-18 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1000 nm |
| Peak sensitivity wavelength (typ.) | 800 nm |
| Photosensitivity (typ.) | 0.38 A/W |
| Dark current (max.) | 10 pA |
| Rise time (typ.) | 0.1 μs |
| Terminal capacitance (typ.) | 25 pF |
| Noise equivalent power (typ.) | 1×10-14 W/Hz1/2 |
| Measurement condition | Ta=25 ???, Typ., Photosensitivity: λ=800 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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Si Photodiode S2386-5k
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Approx. Rs 1,140 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S2386-5K |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Number of elements | 1 |
| Made in | Japan |
| Photosensitive area | 2.4 × 2.4 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.6 A/W |
| Dark current (max.) | 5 pA |
| Rise time (typ.) | 1.8 μs |
| Terminal capacitance (typ.) | 730 pF |
| Noise equivalent power (typ.) | 9.6×10-16 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted |
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Si Photodiode, Part Number: S6428-01
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Approx. Rs 1,120 / PieceGet Latest Price
Product BrochureProduct Details:| Part Number | S6428-01 |
| Spectral response range | 400 to 540 nm |
| Photosensitive area | 2.8 x 2.4 mm |
| Dark current (max.) | 0.02 nA |
| Made in | Japan |
| Package material | Plastic |
Package materialPlasticPhotosensitive area2.8 x 2.4 mmSpectral response range400 to 540 nmDark current (max.)0.02 nATerminal capacitance200 pFRise time0.5 μsNoteFor blueMeasurement conditionTyp. Ta=25 deg.C, unless otherwise noted
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Si Pin Photodiode
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Approx. Rs 450 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S1223 |
| Dark current (max.) | 10000 pA |
| Terminal capacitance (typ.) | 10 pF |
| Package | Metal |
| Photosensitivity (typ.) | 0.52 A/W |
| Noise equivalent power (typ.) | 9.4x10-15 W/Hz1/2 |
| Cooling | Non-cooled |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Cutoff frequency (typ.) | 30 MHz |
| Photosensitive area | 2.4 x 2.8 mm |
| Number of elements | 1 |
| Package category | TO-5 |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Measurement condition | Ta=25 ???, Typ., Photosensitivity: λ=780 nm, Dark current: VR=20 V, Cutoff frequency: VR=20 V, Terminal capacitance: VR=20 V, f=1 MHz, Noise equivalent power: VR=20 V, λ=λp, unless otherwise noted |
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Si Pin Photodiode
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Approx. Rs 660 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S5821 |
| Noise equivalent power (typ.) | 6.7x10-15 W/Hz1/2 |
| Number of elements | 1 |
| Cutoff frequency (typ.) | 25 MHz |
| Package | Metal |
| Package category | TO-18 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 20 V |
| Terminal capacitance (typ.) | 3 pF |
| Photosensitive area | 1.2 mm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Dark current (max.) | 2000 pA |
| Photosensitivity (typ.) | 0.52 A/W |
| Spectral response range | 320 to 1100 nm |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=780 nm, Dark current: VR=10 V, Cutoff frequency: VR=10 V, Terminal capacitance: VR=10 V, f=1 MHz, Noise equivalent power: VR=10 V, λ=λp, unless otherwise noted |
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Si PIN Photodiode
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Approx. Rs 445 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Package | Plastic |
| Package Category | SIP type (with lens) |
| Peak emission wavelength (typ.) | 940 nm |
| Spectral half-width (typ.) | 60 nm |
| Radiant flux (typ.) | 1.4 mW |
| Forward voltage (typ.) | 1.25 V |
PackagePlasticPackage CategorySIP type (with lens)Peak emission wavelength (typ.)940 nmSpectral half-width (typ.)60 nmRadiant flux (typ.)1.4 mWForward voltage (typ.)1.25 VMeasurement conditionTyp. Ta=25 ???, unless otherwise noted
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SI Photodiode, Part Number: S9702
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Approx. Rs 1,020 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S9702 |
| Package size | 3.0 x 4.0 x 2.0 mm |
| Dark current (max.) | 0.05 nA |
| Peak sensitivity wavelength (Green) | 540 nm |
| Spectral response range (Blue) | 400 to 540 nm |
| Spectral response range (Red) | 590 to 720 nm |
| Peak sensitivity wavelength (Blue) | 460 nm |
| Photosensitivity (Green) | 0.23 A/W |
| Package material | Plastic |
| Photosensitive area | 1 x 1 mm |
| Peak sensitivity wavelength (Red) | 620 nm |
| Photosensitivity (Blue) | 0.18 A/W |
| Product type | RGB photodiode |
| Package type | Surface mount type |
| Spectral response range (Green) | 480 to 600 nm |
| Photosensitivity (Red) | 0.16 A/W |
| Product type | RGB photodiode |
|---|---|
| Package material | Plastic |
| Package type | Surface mount type |
| Package size | 3.0 x 4.0 x 2.0 mm |
| Photosensitive area | 1 x 1 mm |
| Spectral response range (Blue) | 400 to 540 nm |
| Spectral response range (Green) | 480 to 600 nm |
| Spectral response range (Red) | 590 to 720 nm |
| Peak sensitivity wavelength (Blue) | 460 nm |
| Peak sensitivity wavelength (Green) | 540 nm |
| Peak sensitivity wavelength (Red) | 620 nm |
| Photosensitivity (Blue) | 0.18 A/W |
| Photosensitivity (Green) | 0.23 A/W |
| Photosensitivity (Red) | 0.16 A/W |
| Dark current (max.) | 0.05 nA |
| Terminal capacitance | 12 pF |
| Rise time | 0.1 μs |
| Operating temperature | -25 to +85 deg.C |
| Storage temperature | -40 to +85 deg.C |
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HAMAMATSU Si Photodiode
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Approx. Rs 5,650 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S1336-5BQ |
| Brand | HAMAMATSU |
| Spectral response range | 190 to 1100 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Package category | TO-5 |
| Number of elements | 1 |
| Terminal capacitance (typ.) | 65 pF |
| Package | Metal |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Dark current (max.) | 30 pA |
| Photosensitive area | 2.4 x 2.4 mm |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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Si APD , Part Number: S12426-02
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Approx. Rs 7,000 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S12426-02 |
| Terminal capacitance (typ.) | 0.5 pF |
| Package | Metal |
| Photosensitivity (typ.) | 0.52 A/W |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 840 nm |
| Spectral response range | 400 to 1100 nm |
| Breakdown voltage (typ.) | 160 V |
| Dark current (max.) | 1 nA |
| Cutoff frequency (typ.) | 650 MHz |
| Type | High-speed type (for 900 nm, Low bias operation) |
| Gain (typ.) | 100 |
| Type | High-speed type (for 900 nm, Low bias operation) |
|---|---|
| Photosensitive area | φ0.2 mm |
| Package | Metal |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 840 nm |
| Spectral response range | 400 to 1100 nm |
| Photosensitivity (typ.) | 0.52 A/W |
| Dark current (max.) | 1 nA |
| Cutoff frequency (typ.) | 650 MHz |
| Terminal capacitance (typ.) | 0.5 pF |
| Breakdown voltage (typ.) | 160 V |
| Temperature coefficient of breakdown voltage (typ.) | 1.1 V/??? |
| Gain (typ.) | 100 |
| Measurement condition | Typ. Ta=25 ???, unless otherwise noted, Photosensitivity: λ=900 nm, M=1 |
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Hamamatsu Si Photodiode
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Approx. Rs 8,970 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | S1337-66BR |
| Brand | HAMAMATSU |
| Spectral response range | 340 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitive area | 5.8 x 5.8 mm |
| Cooling | Non-cooled |
| Number of elements | 1 |
| Package | Ceramic |
| Reverse voltage (max.) | 5 V |
| Photosensitivity (typ.) | 0.62 A/W |
| Dark current (max.) | 100 pA |
| Terminal capacitance (typ.) | 380 pF |
| Photosensitive area | 5.8 × 5.8 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 340 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.62 A/W |
| Dark current (max.) | 100 pA |
| Rise time (typ.) | 1 μs |
| Terminal capacitance (typ.) | 380 pF |
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Si Pin Photodiode
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Approx. Rs 790 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | S5821-03 |
| Brand | HAMAMATSU |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 20 V |
| Dark current (max.) | 2000 pA |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.52 A/W |
| Terminal capacitance (typ.) | 3 pF |
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-18, with lens |
| Spectral response range | 320 to 1100 nm |
| Cutoff frequency (typ.) | 25 MHz |
The S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible near infrared light. The S5821 series provides high performance and relibility at a low cost.
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HAMAMATSU InGaAs APD
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Approx. Rs 60,500 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | G8931-20 |
| Brand | HAMAMATSU |
| Number of elements | 1 |
| Breakdown voltage (typ.) | 55 V |
| Dark current (max.) | 200 nA |
| Peak sensitivity wavelength (typ.) | 1550 nm |
| Package Category | TO-18 |
| Cutoff frequency (typ.) | 900 MHz |
| Terminal capacitance (typ.) | 1.5 pF |
| Photosensitivity (typ.) | 0.9 A/W |
| Spectral response range | 950 to 1700 nm |
| Package | Metal |
| Number of elements | 1 |
|---|---|
| Photosensitive area | φ0.2 mm |
| Package | Metal |
| Package Category | TO-18 |
| Spectral response range | 950 to 1700 nm |
| Peak sensitivity wavelength (typ.) | 1550 nm |
| Photosensitivity (typ.) | 0.9 A/W |
| Dark current (max.) | 200 nA |
| Cutoff frequency (typ.) | 900 MHz |
| Terminal capacitance (typ.) | 1.5 pF |
| Breakdown voltage (typ.) | 55 V |
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Si Photodiode, Part Number: S1337-16BQ
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Approx. Rs 4,200 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | S1337-16BQ |
| Photosensitive area | 5.9 x 1.1 mm |
| Number of elements | 1 |
| Package | Ceramic |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Cooling | Non-cooled |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Dark current (max.) | 50 pA |
| Terminal capacitance (typ.) | 65 pF |
| Photosensitive area | 5.9 × 1.1 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 50 pA |
| Rise time (typ.) | 0.2 μs |
| Terminal capacitance (typ.) | 65 pF |
| Noise equivalent power (typ.) | 1×10-14 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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Ultra Fast Photodiode
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Minimum Order Quantity | 1 Piece |
| Rise Times | starting from 15 ps |
| Bandwidths | up to 25 GHz |
| Spectral Ranges | 170 - 2600 nm (UV to IR) |
| Battery or External | Power Supply |
| Compact | Design |
| Ultra High | Speed Operation |
Rise time= < 200 ps – 500 ps.
Wavelength range=300 nm – 1100 nm.
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Ultra Fast Ingaas- Photodiode
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Mounting Type | Through Hole |
| Usage/Application | DPSS laser |
| PD | typical to 0.1 dB |
| Rise time | < 15 ps |
| bandwidth | > 25 GHz |
| Country of Origin | Made in India |
Rise time= 70 ps
Wavelength range= 800-1700 nm
Connector Type=SMA
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Si Photodiode
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Approx. Rs 1,220 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S2386-44K |
| Reverse voltage (max.) | 30 V |
| Photosensitive area | 3.6 x 3.6 mm |
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Photosensitive area | 3.6 × 3.6 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.6 A/W |
| Dark current (max.) | 20 pA |
| Rise time (typ.) | 3.6 μs |
| Terminal capacitance (typ.) | 1600 pF |
| Noise equivalent power (typ.) | 1.4×10-15 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted |
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Si Photodiode
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Approx. Rs 10,040 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S1337-1010BQ |
| Package | Ceramic |
| Cooling | Non-cooled |
| Photosensitive area | 10 x 10 mm |
| Made in | Japan |
| Reverse voltage (max.) | 5 V |
| Number of elements | 1 |
| Photosensitive area | 10 × 10 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 200 pA |
| Rise time (typ.) | 3 μs |
| Terminal capacitance (typ.) | 1100 pF |
| Noise equivalent power (typ.) | 1.8×10-14 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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C30954EH - Si APD, 0.8mm, TO-5 Package
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Product BrochureProduct Details:| Dark Current | 50nA |
| Gain | 120 |
| Rise/Fall Time | 2ns |
| Temperature Coefficient | 2.4 V per degree celsius |
| Active Area | 0.5 mm2 |
| Package | TO-5 |
| Active Diameter | 0.8 mm |
| Capacitance | 2pF |
| Vop Range | 275-450 V |
| Peak Sensitivity Wavelength | 900 nm |
| Wavelength | 400-1100 nm |
The C30954EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 0.8 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
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Photodiode array for DWDM monitor
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Product BrochureProduct Details:| Spectral response range | 0.9 to 1.7 micro m |
| Peak sensitivity wavelength (typ.) | 1.55 micro m |
| Terminal capacitance (typ.) | 1.4 pF |
| Measurement condition | Typ. Ta is equal to 25 degree celsius, unless otherwise noted |
| Photosensitivity (typ.) | 0.95 A per W |
| Dark current (max.) | 0.2 nA |
| Cutoff frequency (typ.) | 1000 MHz |
Features
- 250 μm pitch, 40 ch parallel readout
- Low crosstalk
- Precise chip position tolerance: ±0.05 mm
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Integrates a Si photodiode for precision photometry with low-noise amp
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Product BrochureProduct Details:| Cutoff frequency | Low range: 1000 High range: 10 Hz |
| Supply voltage | +-5 to +-12 V |
| Measurement condition | Ta is equal to 25 degree celsius, Vcc=+-12 V, unless otherwise noted |
| Output | Analog |
| Photosensitive area | 5.8 x 5.8 mm |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength | 960 nm |
C10439-02 photodiode module is a high-precision photodetector that integrates a Si photodiode and a current-to-voltage amplifier. The output from the photodiode module is an analog voltage and can be easily checked with a voltmeter, etc. Since their sensitivity is switchable between two ranges (High/Low), highly accurate output can be obtained by selecting the proper sensitivity range that matches the light level to be detected.
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Ultra Fast Ge-Photodiode
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Minimum Order Quantity | 1 Piece |
| Brand | HAMAMATSU |
| Ultra High | Speed Operation |
| Rise Times starting from | starting from 15 ps |
| Bandwidths | up to 25 GHz |
| Spectral Ranges | 170 - 2600 nm (UV to IR) |
| Battery or External | Power Supply |
| Compact | Design |
Rise time= 300 ps,
Wavelength range= 500nm -1800 nm
Rise time= 300 ps,
Wavelength range= 500nm -1800 nm
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Photodiode molded into clear plastic package
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Product Details:| Rise time (typ.) | 2 micro sec |
| Cooling | Non-cooled |
| Photosensitive area | 1.3 x 1.3 mm |
| Dark current (max.) | 50 pA |
| Reverse voltage (max.) | 10 V |
| Spectral response range | 320 to 840 nm |
| Peak sensitivity wavelength (typ.) | 540 nm |
| Number of elements | 1 |
| Package | Plastic |
| Photosensitivity (typ.) | 0.3 A per W |
| Terminal capacitance (typ.) | 700 pF |
| Package category | Filterless type |
Features
-Visible range (Filterless type)
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Linear Array Ccd Sensor
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Number of LEDs | 7 |
| Type | Array |
| Power | Electric |
| Frequency | 60 Hz |
| Country of Origin | Made in India |
Advanced high-sensitivity CCD-array complete with driving electronics offers a cost-effective solution to light-measurement applications. Pixel=2048 Pixel,
Wavelength Range= 300 – 1100 nm
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Infrared - To - Visible Converter
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Approx. Rs 10,000 / PieceGet Latest Price
Product BrochureProduct Details:| SPECTRAL SENSITIVITY | 800-1,700nm |
| INCLUDES | Stand |
| P/N | VS-IR |
| PRODUCT WEIGHT (LBS) | 0.7 |
| PART TYPE | Disc |
| TARGET SIZE | 1.37 inches [35 mm] diameter |
For viweing IR high-power Nd: YAG- lasers.
Special ceramics. Nd:YAG lasers are used in manufacturing for engraving, etching, or marking a variety of metals and plastics, or for metal surface enhancement processes like laser peening.
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UV Blaster Box
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Approx. Rs 30,000 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Power | 11 Watts |
| Wavelength | 254 nm Peak |
| Frequency | 50 Hz |
| Lamp | UV-C & Hydroxyl |
| Body Material | Powder Coated MS |
| UVC Tube | 3 UVC Tube & 1 Hydroxyl Radical Tube |
| Operating Voltage | 230VAC |
| Country of Origin | Made in India |
UV lamps are optimally placed to eliminate blind spots and corners.
The operator is protected from UV radiation by safety controls to ensure that lamps cannot be activated until the cabinet door is securely closed.
Given system has provision to completely disinfect the laptop in open condition.
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Broadband Amplifier
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Approx. Rs 10,00,000 / UnitGet Latest Price
Product Details:| Minimum Order Quantity | 1 Unit |
| Gain | + 20 dB |
| Bandwidth | 1 GHz - 4 MHz |
| Broadband | Amplifier |
| Ultra | Fast diductor |
Gain= + 20 dB.
Bandwidth= 1 GHz - 4 MHzGain= + 20 dB.
Bandwidth= 1 GHz - 4 MHz
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New Age Instruments & Materials Private Limited
New Age Instruments & Materials Private Limited
12-15, Apna Enclave Shopping Complex,
Railway Road
Gurgaon - 122001, Gurugram, Haryana, India
Gurgaon - 122001, Gurugram, Haryana, India
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