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Ultra Fast Detectors
The UPD series of ultra fast photo detectors are best suited for measuring of optical waveforms from DC to 10 GHz. various models feature rise times from 30 to 500 ps and cover the spectral range from 170 to 1700 nm. All photo detectors are enclosed incompact and solid aluminum housings and can be biased with a battery or an external power supply. The UV-extended versions of the silicontype photo detectors are the only commercial products that cover the spectral range from 170 to 1100 nm.
Si Photodiode S2386-18l
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Approx. Rs 1,118 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S2386-18L |
| Package | Metal |
| Package category | Japan |
| Cooling | Non-cooled |
| Number of elements | 1 |
| Made in | Japan |
| Photosensitive area | 1.1 × 1.1 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-18, with lens |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.6 A/W |
| Dark current (max.) | 2 pA |
| Rise time (typ.) | 0.4 μs |
| Terminal capacitance (typ.) | 140 pF |
| Noise equivalent power (typ.) | 6.8×10-16 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted |
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Si Photodiode S12698
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Approx. Rs 6,530 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S12698 |
| Number of elements | 1 |
| Made in | Japan |
| Package | Metal |
| Package category | Japan |
| Cooling | Non-cooled |
| Photosensitive area | 1.1 × 1.1 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-18 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1000 nm |
| Peak sensitivity wavelength (typ.) | 800 nm |
| Photosensitivity (typ.) | 0.38 A/W |
| Dark current (max.) | 10 pA |
| Rise time (typ.) | 0.1 μs |
| Terminal capacitance (typ.) | 25 pF |
| Noise equivalent power (typ.) | 1×10-14 W/Hz1/2 |
| Measurement condition | Ta=25 ???, Typ., Photosensitivity: λ=800 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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Si Photodiode S2386-5k
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Approx. Rs 1,140 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S2386-5K |
| Made in | Japan |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Number of elements | 1 |
| Photosensitive area | 2.4 × 2.4 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.6 A/W |
| Dark current (max.) | 5 pA |
| Rise time (typ.) | 1.8 μs |
| Terminal capacitance (typ.) | 730 pF |
| Noise equivalent power (typ.) | 9.6×10-16 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted |
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Si Photodiode, Part Number: S6428-01
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Approx. Rs 1,120 / PieceGet Latest Price
Product BrochureProduct Details:| Part Number | S6428-01 |
| Dark current (max.) | 0.02 nA |
| Made in | Japan |
| Package material | Plastic |
| Spectral response range | 400 to 540 nm |
| Photosensitive area | 2.8 x 2.4 mm |
Package materialPlasticPhotosensitive area2.8 x 2.4 mmSpectral response range400 to 540 nmDark current (max.)0.02 nATerminal capacitance200 pFRise time0.5 μsNoteFor blueMeasurement conditionTyp. Ta=25 deg.C, unless otherwise noted
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Si Pin Photodiode
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Approx. Rs 450 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S1223 |
| Spectral response range | 320 to 1100 nm |
| Dark current (max.) | 10000 pA |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Terminal capacitance (typ.) | 10 pF |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Photosensitivity (typ.) | 0.52 A/W |
| Cutoff frequency (typ.) | 30 MHz |
| Noise equivalent power (typ.) | 9.4x10-15 W/Hz1/2 |
| Photosensitive area | 2.4 x 2.8 mm |
| Package | Metal |
| Reverse voltage (max.) | 30 V |
| Number of elements | 1 |
| Measurement condition | Ta=25 ???, Typ., Photosensitivity: λ=780 nm, Dark current: VR=20 V, Cutoff frequency: VR=20 V, Terminal capacitance: VR=20 V, f=1 MHz, Noise equivalent power: VR=20 V, λ=λp, unless otherwise noted |
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Si Pin Photodiode
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Approx. Rs 660 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S5821 |
| Reverse voltage (max.) | 20 V |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitive area | 1.2 mm |
| Cooling | Non-cooled |
| Spectral response range | 320 to 1100 nm |
| Dark current (max.) | 2000 pA |
| Number of elements | 1 |
| Package | Metal |
| Photosensitivity (typ.) | 0.52 A/W |
| Package category | TO-18 |
| Terminal capacitance (typ.) | 3 pF |
| Cutoff frequency (typ.) | 25 MHz |
| Noise equivalent power (typ.) | 6.7x10-15 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=780 nm, Dark current: VR=10 V, Cutoff frequency: VR=10 V, Terminal capacitance: VR=10 V, f=1 MHz, Noise equivalent power: VR=10 V, λ=λp, unless otherwise noted |
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Si PIN Photodiode
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Approx. Rs 445 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Package Category | SIP type (with lens) |
| Peak emission wavelength (typ.) | 940 nm |
| Spectral half-width (typ.) | 60 nm |
| Radiant flux (typ.) | 1.4 mW |
| Forward voltage (typ.) | 1.25 V |
| Package | Plastic |
PackagePlasticPackage CategorySIP type (with lens)Peak emission wavelength (typ.)940 nmSpectral half-width (typ.)60 nmRadiant flux (typ.)1.4 mWForward voltage (typ.)1.25 VMeasurement conditionTyp. Ta=25 ???, unless otherwise noted
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SI Photodiode, Part Number: S9702
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Approx. Rs 1,020 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S9702 |
| Product type | RGB photodiode |
| Peak sensitivity wavelength (Red) | 620 nm |
| Spectral response range (Red) | 590 to 720 nm |
| Photosensitive area | 1 x 1 mm |
| Spectral response range (Green) | 480 to 600 nm |
| Photosensitivity (Blue) | 0.18 A/W |
| Package size | 3.0 x 4.0 x 2.0 mm |
| Spectral response range (Blue) | 400 to 540 nm |
| Peak sensitivity wavelength (Blue) | 460 nm |
| Peak sensitivity wavelength (Green) | 540 nm |
| Photosensitivity (Green) | 0.23 A/W |
| Package material | Plastic |
| Package type | Surface mount type |
| Photosensitivity (Red) | 0.16 A/W |
| Dark current (max.) | 0.05 nA |
| Product type | RGB photodiode |
|---|---|
| Package material | Plastic |
| Package type | Surface mount type |
| Package size | 3.0 x 4.0 x 2.0 mm |
| Photosensitive area | 1 x 1 mm |
| Spectral response range (Blue) | 400 to 540 nm |
| Spectral response range (Green) | 480 to 600 nm |
| Spectral response range (Red) | 590 to 720 nm |
| Peak sensitivity wavelength (Blue) | 460 nm |
| Peak sensitivity wavelength (Green) | 540 nm |
| Peak sensitivity wavelength (Red) | 620 nm |
| Photosensitivity (Blue) | 0.18 A/W |
| Photosensitivity (Green) | 0.23 A/W |
| Photosensitivity (Red) | 0.16 A/W |
| Dark current (max.) | 0.05 nA |
| Terminal capacitance | 12 pF |
| Rise time | 0.1 μs |
| Operating temperature | -25 to +85 deg.C |
| Storage temperature | -40 to +85 deg.C |
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HAMAMATSU Si Photodiode
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Approx. Rs 5,650 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S1336-5BQ |
| Brand | HAMAMATSU |
| Photosensitive area | 2.4 x 2.4 mm |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Terminal capacitance (typ.) | 65 pF |
| Photosensitivity (typ.) | 0.5 A/W |
| Package | Metal |
| Spectral response range | 190 to 1100 nm |
| Number of elements | 1 |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Dark current (max.) | 30 pA |
| Package category | TO-5 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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Si APD , Part Number: S12426-02
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Approx. Rs 7,000 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S12426-02 |
| Terminal capacitance (typ.) | 0.5 pF |
| Breakdown voltage (typ.) | 160 V |
| Package | Metal |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 840 nm |
| Photosensitivity (typ.) | 0.52 A/W |
| Dark current (max.) | 1 nA |
| Cutoff frequency (typ.) | 650 MHz |
| Gain (typ.) | 100 |
| Type | High-speed type (for 900 nm, Low bias operation) |
| Spectral response range | 400 to 1100 nm |
| Type | High-speed type (for 900 nm, Low bias operation) |
|---|---|
| Photosensitive area | φ0.2 mm |
| Package | Metal |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 840 nm |
| Spectral response range | 400 to 1100 nm |
| Photosensitivity (typ.) | 0.52 A/W |
| Dark current (max.) | 1 nA |
| Cutoff frequency (typ.) | 650 MHz |
| Terminal capacitance (typ.) | 0.5 pF |
| Breakdown voltage (typ.) | 160 V |
| Temperature coefficient of breakdown voltage (typ.) | 1.1 V/??? |
| Gain (typ.) | 100 |
| Measurement condition | Typ. Ta=25 ???, unless otherwise noted, Photosensitivity: λ=900 nm, M=1 |
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UV Blaster Box
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Approx. Rs 30,000 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Power | 11 Watts |
| Wavelength | 254 nm Peak |
| Lamp | UV-C & Hydroxyl |
| Body Material | Powder Coated MS |
| UVC Tube | 3 UVC Tube & 1 Hydroxyl Radical Tube |
| Operating Voltage | 230VAC |
| Frequency | 50 Hz |
| Country of Origin | Made in India |
UV lamps are optimally placed to eliminate blind spots and corners.
The operator is protected from UV radiation by safety controls to ensure that lamps cannot be activated until the cabinet door is securely closed.
Given system has provision to completely disinfect the laptop in open condition.
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Hamamatsu Si Photodiode
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Approx. Rs 8,970 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | S1337-66BR |
| Brand | HAMAMATSU |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 340 to 1100 nm |
| Photosensitivity (typ.) | 0.62 A/W |
| Dark current (max.) | 100 pA |
| Photosensitive area | 5.8 x 5.8 mm |
| Package | Ceramic |
| Cooling | Non-cooled |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Terminal capacitance (typ.) | 380 pF |
| Number of elements | 1 |
| Photosensitive area | 5.8 × 5.8 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 340 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.62 A/W |
| Dark current (max.) | 100 pA |
| Rise time (typ.) | 1 μs |
| Terminal capacitance (typ.) | 380 pF |
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Si Pin Photodiode
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Approx. Rs 790 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | S5821-03 |
| Brand | HAMAMATSU |
| Package category | TO-18, with lens |
| Cooling | Non-cooled |
| Cutoff frequency (typ.) | 25 MHz |
| Terminal capacitance (typ.) | 3 pF |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Dark current (max.) | 2000 pA |
| Number of elements | 1 |
| Package | Metal |
| Reverse voltage (max.) | 20 V |
| Photosensitivity (typ.) | 0.52 A/W |
The S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible near infrared light. The S5821 series provides high performance and relibility at a low cost.
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HAMAMATSU InGaAs APD
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Approx. Rs 60,500 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | G8931-20 |
| Brand | HAMAMATSU |
| Package | Metal |
| Dark current (max.) | 200 nA |
| Peak sensitivity wavelength (typ.) | 1550 nm |
| Terminal capacitance (typ.) | 1.5 pF |
| Photosensitivity (typ.) | 0.9 A/W |
| Spectral response range | 950 to 1700 nm |
| Breakdown voltage (typ.) | 55 V |
| Package Category | TO-18 |
| Number of elements | 1 |
| Cutoff frequency (typ.) | 900 MHz |
| Number of elements | 1 |
|---|---|
| Photosensitive area | φ0.2 mm |
| Package | Metal |
| Package Category | TO-18 |
| Spectral response range | 950 to 1700 nm |
| Peak sensitivity wavelength (typ.) | 1550 nm |
| Photosensitivity (typ.) | 0.9 A/W |
| Dark current (max.) | 200 nA |
| Cutoff frequency (typ.) | 900 MHz |
| Terminal capacitance (typ.) | 1.5 pF |
| Breakdown voltage (typ.) | 55 V |
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Si Photodiode, Part Number: S1337-16BQ
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Approx. Rs 4,200 / NumberGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Number |
| Part Number | S1337-16BQ |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Terminal capacitance (typ.) | 65 pF |
| Photosensitive area | 5.9 x 1.1 mm |
| Number of elements | 1 |
| Package | Ceramic |
| Dark current (max.) | 50 pA |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Photosensitive area | 5.9 × 1.1 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 50 pA |
| Rise time (typ.) | 0.2 μs |
| Terminal capacitance (typ.) | 65 pF |
| Noise equivalent power (typ.) | 1×10-14 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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Si Photodiode
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Approx. Rs 1,220 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S2386-44K |
| Photosensitive area | 3.6 x 3.6 mm |
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Photosensitive area | 3.6 × 3.6 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-5 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 30 V |
| Spectral response range | 320 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.6 A/W |
| Dark current (max.) | 20 pA |
| Rise time (typ.) | 3.6 μs |
| Terminal capacitance (typ.) | 1600 pF |
| Noise equivalent power (typ.) | 1.4×10-15 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted |
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Si Photodiode
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Approx. Rs 10,040 / PieceGet Latest Price
Product BrochureProduct Details:| Minimum Order Quantity | 1 Piece |
| Part Number | S1337-1010BQ |
| Photosensitive area | 10 x 10 mm |
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Made in | Japan |
| Photosensitive area | 10 × 10 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 200 pA |
| Rise time (typ.) | 3 μs |
| Terminal capacitance (typ.) | 1100 pF |
| Noise equivalent power (typ.) | 1.8×10-14 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ???, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
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Ultra Fast Photodiode
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Minimum Order Quantity | 1 Piece |
| Ultra High | Speed Operation |
| Rise Times | starting from 15 ps |
| Bandwidths | up to 25 GHz |
| Spectral Ranges | 170 - 2600 nm (UV to IR) |
| Battery or External | Power Supply |
| Compact | Design |
Rise time= < 200 ps – 500 ps.
Wavelength range=300 nm – 1100 nm.
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Ultra Fast Ingaas- Photodiode
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Mounting Type | Through Hole |
| Usage/Application | DPSS laser |
| PD | typical to 0.1 dB |
| Rise time | < 15 ps |
| bandwidth | > 25 GHz |
| Country of Origin | Made in India |
Rise time= 70 ps
Wavelength range= 800-1700 nm
Connector Type=SMA
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Ultra Fast Ge-Photodiode
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Minimum Order Quantity | 1 Piece |
| Brand | HAMAMATSU |
| Ultra High | Speed Operation |
| Rise Times starting from | starting from 15 ps |
| Bandwidths | up to 25 GHz |
| Spectral Ranges | 170 - 2600 nm (UV to IR) |
| Battery or External | Power Supply |
| Compact | Design |
Rise time= 300 ps,
Wavelength range= 500nm -1800 nm
Rise time= 300 ps,
Wavelength range= 500nm -1800 nm
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Broadband Amplifier
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Approx. Rs 10 Lakh / UnitGet Latest Price
Product Details:| Minimum Order Quantity | 1 Unit |
| Gain | + 20 dB |
| Bandwidth | 1 GHz - 4 MHz |
| Broadband | Amplifier |
| Ultra | Fast diductor |
Gain= + 20 dB.
Bandwidth= 1 GHz - 4 MHzGain= + 20 dB.
Bandwidth= 1 GHz - 4 MHz
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Infrared - To - Visible Converter
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Approx. Rs 10,000 / PieceGet Latest Price
Product BrochureProduct Details:| INCLUDES | Stand |
| P/N | VS-IR |
| PRODUCT WEIGHT (LBS) | 0.7 |
| PART TYPE | Disc |
| TARGET SIZE | 1.37 inches [35 mm] diameter |
| SPECTRAL SENSITIVITY | 800-1,700nm |
For viweing IR high-power Nd: YAG- lasers.
Special ceramics. Nd:YAG lasers are used in manufacturing for engraving, etching, or marking a variety of metals and plastics, or for metal surface enhancement processes like laser peening.
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Linear Array Ccd Sensor
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Approx. Rs 10,000 / PieceGet Latest Price
Product Details:| Number of LEDs | 7 |
| Power | Electric |
| Frequency | 60 Hz |
| Type | Array |
| Country of Origin | Made in India |
Advanced high-sensitivity CCD-array complete with driving electronics offers a cost-effective solution to light-measurement applications. Pixel=2048 Pixel,
Wavelength Range= 300 – 1100 nm
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New Age Instruments & Materials Private Limited
New Age Instruments & Materials Private Limited
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